中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2001, vol.101, no.104 2001, vol.101, no.14 2001, vol.101, no.15 2001, vol.101, no.160 2001, vol.101, no.161 2001, vol.101, no.162
2001, vol.101, no.294 2001, vol.101, no.295 2001, vol.101, no.313 2001, vol.101, no.337 2001, vol.101, no.500 2001, vol.101, no.501
2001, vol.101, no.549 2001, vol.101, no.550 2001, vol.101, no.551 2001, vol.101, no.617 2001, vol.101, no.618 2001, vol.101, no.619
2001, vol.101, no.721 2001, vol.101, no.78 2001, vol.101, no.79 2001, vol.101. no.415 2001, vol.101. no.416

题名作者出版年年卷期
Crystallinity and optical properties of Ge{sub}(1-x)C{sub}x on Si(001) and Ge(001)Motoki Okinaka; Yasumasa Hamana; Takashi Tokuda; Jun Ohta; Masahiro Nunoshita20012001, vol.101, no.337
Excitonic states in CdMgTe/CdTe quantum wiresSeiji Nagahara; Takashi Kita; Osamu Wada; Laurent Marsal; Henri Mariette20012001, vol.101, no.337
ErP growth on InP(001) by face-down organometallic vapor phase epitaxyNaoki Watanabe; Yoshitaka Isogai; Shingo Jinno; Takeshi Yamauchi; Yasuhumi Fujiwara; Yoshikazu Takeda; Arao Nakamura20012001, vol.101, no.337
Characteristics of light emission and detection diode using lateral current injection laser in optical access networkSatoshi Murata; Masayuki Arai; Kunishige Oe20012001, vol.101, no.337
TlInGaAs/InP double hetero structures LEDAkiko Mizobata; Hwi Jae Lee; Kenta Konishi; Osamu Maeda; Hajime Asahi20012001, vol.101, no.337
Growth of nitride semiconductors on SiC substrates by RF-MBENobuaki Teraguchi; Akira Suzuki; Yasushi Nanishi20012001, vol.101, no.337
Al{sub}(1-x)Si{sub}xN solid-solution formation and its field emissionMakoto Kasu; Yoshitaka Taniyasu; Naoki Kobayashi20012001, vol.101, no.337
High-efficiency 330-350nm UV-LEDs using quaternary InAlGaNHideki Hirayama; Atsuhiro Kinoshita; Makoto Ainoya; Takayoshi Yamabi; Takuya Yamanaka; Akira Hirata; Yoshinobu Aoyagi20012001, vol.101, no.337
Characterization of GaN based Schottky UV Photodiode in vacuum ultraviolet regionA. Motogaito; K. Ohta; K. Hiramatsu; Y. Ohuchi; K. Tadatomo; Y. Hamamura; K. Fukui20012001, vol.101, no.337
Fabrication and evaluation of short-gate AlGaN/GaN HEMTsKenji Shiojima; Naoteru Shigekawa; Tetsuya Suemitsu20012001, vol.101, no.337
12



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024