中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:电子装置
收藏年代2000~2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告:电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2001, vol.101, no.104 2001, vol.101, no.14 2001, vol.101, no.15 2001, vol.101, no.160 2001, vol.101, no.161 2001, vol.101, no.162
2001, vol.101, no.294 2001, vol.101, no.295 2001, vol.101, no.313 2001, vol.101, no.337 2001, vol.101, no.500 2001, vol.101, no.501
2001, vol.101, no.549 2001, vol.101, no.550 2001, vol.101, no.551 2001, vol.101, no.617 2001, vol.101, no.618 2001, vol.101, no.619
2001, vol.101, no.721 2001, vol.101, no.78 2001, vol.101, no.79 2001, vol.101. no.415 2001, vol.101. no.416

题名作者出版年年卷期
A technique of keeping off the oxidation of Mn evaporant during reactive evaporationMasaaki Isai; Takeyoshi Shimada; Takaaki Matsui; Hiroshi Fujiyasu20012001, vol.101, no.79
Formation and characterization of polytetrafluoroethylene films deposited by synchrotron radiationEisuke Matsumoto; Minoru Uchida; Hiroshi Okada; Akihiro Wakahara; Akira Yoshida20012001, vol.101, no.79
Influence on Schottky contacts of sacrificial anodic oxidation for 6H-SiCMasashi Kato; Masaya Ichimura; Eisuke Arai20012001, vol.101, no.79
MBE growth of GeC using arc plasma gun for a C molecular beamMotoki Okinaka; Ryoichi Dansho; Yasumasa Hamana; Takashi Tokuda; Jun Ohta; Masahiro Nunoshita20012001, vol.101, no.79
Buffered HF etching characteristics of Si{sub}(1-x-y)Ge{sub}xC{sub}y epitaxial filmsShoichi Ishida; Mitsuo Miyamoto; Yoshiaki Hashiba; Takashi Matsuura; Junichi Murota20012001, vol.101, no.79
Evaluation of MOS process under the environment without clean room by utilizing TEGRyouichi Tomida; Atsushi Tsurumaru; Yasuhiro Kawauti; Takahiro Ikeno; Hideo Uchida; Masaya Ichimura; Eisuke Arai20012001, vol.101, no.79
Investigation of plasma induced damage on CMOS-ICs using atmospheric plasma cleaning equipmentNobuyuki Takakura; Takuji Keno; Masaharu Yasuda; Yasushi Sawada; Yoshitami Inoue; Kenji Taniguchi20012001, vol.101, no.79
Optimization of simulation parameters for phosphorus and boron diffusionDaisuke Iida; Hiroshi Asai; Hideo Uchida; Masaya Ichimura; Eisuke Arai20012001, vol.101, no.79
Detection and transfer of elementary charge in Si-wire MOS structuresA. Fujiwara; Y. Takahashi20012001, vol.101, no.79
Fabrication and proposition of high sensitive chemical potential sensor used charge transfer techniqueKazuaki Sawada; Hidekuni Takao; Makoto Ishida20012001, vol.101, no.79
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