中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Pseudomorphic In{sub}0.52Al{sub}0.48As/In{sub}0.7Ga{sub}0.3 As HEMTs with an ultrahigh f{sub}T of 562 GHzYoshimi Yamashita; Akira Endoh; Keisuke Shinohara; Kohki Hikosaka; Toshiaki Matsui; Satoshi Hiyamizu; Takashi Mimura20022002, vol.23, no.10
Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)Chung-Er Huang; Chien-Ping Lee; Hsien-Chang Liang; Ron-Ting Huang20022002, vol.23, no.10
Experimental evaluation of the InP-InGaAs-HBT power-gain resonanceB. Willen; M. Rohner; V. Schwarz; H. Jackel20022002, vol.23, no.10
Implementation of reduced turn-on voltage InGaP HBTs using graded GaInAsN base regionsP. M. Deluca; C. R. Lutz; R. E. Welser; T. Y. Chi; E. K. Huang; R. J. Welty; P. M. Asbeck20022002, vol.23, no.10
High-performance antimonide-based heterostructure backward diodes for millimeter-wave detectionPatrick Fay; J. N. Schulman; S. Thomas III; D. H. Chow; Y. K. Boegeman; K. S. Holabird20022002, vol.23, no.10
P-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)R. Coffie; D. Buttari; S. Heikman S. Keller; A. Chini; L. Shen; U. K. Mishra20022002, vol.23, no.10
CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICsJun-Bo Yoon; Yun-Seok Choi; Byeong-Il Kim; Yunseong Eo; Euisik Yoon20022002, vol.23, no.10
Area dependence of TDDB characteristics for HfO{sub}2 gate dielectricsYoung Hee Kim; Katsunori Onishi; Chang Seok Kang; Hag-Ju Cho; Renee Nieh; Sundar Gopalan; Rino Choi; Jeong Han; Siddarth Krishnan; Jack C. Lee20022002, vol.23, no.10
Charge trapping in ultrathin hafnium oxideW. J. Zhu; T. P. Ma; S. Zafar; T. Tamagawa20022002, vol.23, no.10
Trench isolation step-induced (TRISI) narrow width effect on MOSFETYoungmin Kim; Seetharaman Sridhar; Amitava Chatterjee20022002, vol.23, no.10
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