中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
La{sub}2O{sub}3/Si{sub}0.3Ge{sub}0.7 p-MOSFETs with high hole mobility and good device characteristicsC. H. Huang; S. B. Chen; Albert Chin20022002, vol.23, no.12
Record Q symmetrical inductors for 10-GHz LC-VCOs in 0.18-μm gate-length CMOSL. F. Tiemeijer; R. J. Havens; N. Pavlovic; D. M. W. Leenaerts20022002, vol.23, no.12
Heating effects of clock drivers in bulk, SOI, and 3-D CMOSChristianto C. Liu; Jifeng Zhang; Ashim K. Datta; Sandip Tiwari20022002, vol.23, no.12
A novel double offset-implanted source/drain technology for reduction of gate-induced drain-leakage with 0.12-μm single-gate low-power SRAM deviceSang-Hun Seo; Won-Suk Yang; Han-Sin Lee; Moo-Sung Kim; Kwang-Ok Koh; Seung-Hyun Park; Kyeong-Tae Kim20022002, vol.23, no.12
Low-frequency noise characteristics in p-channel FinFETsJeong-Soo Lee; Yang-Kyu Choi; Daewon Ha; Tsu-Jae King; Jeffrey Bokor20022002, vol.23, no.12
Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)F. Udrea; U. N. K. Udugampola; K. Sheng; R. A. McMabon; G. A. J. Amaratunga; E. M. S. Narayanan; M. M. De Souza; S. Hardikar20022002, vol.23, no.12
Interfacial defect states in HfO{sub}2 and ZrO{sub}2 nMOS capacitorsS. Mudanai; F. Li; S. B. Samavedam; P. J. Tobin; C. S. Kang; R. Nieh; J. C. Lee; L. F. Register; S. K. Banerjee20022002, vol.23, no.12
High transmission gain integrated antenna on extremely high resistivity Si for ULSI wireless interconnectA. B. M. H. Rashid; S. Watanabe; T. Kikkawa20022002, vol.23, no.12
Dynamic NBTI of p-MOS transistors and its impact on MOSFET scalingG. Chen; M. F. Li; C. H. Ang; J. Z. Zheng; D. L. Kwong20022002, vol.23, no.12
Gate-induced floating body effect excess noise in partially depleted SOI MOSFETsFrancois Dieudonne; Jalal Jomaah; Francis Balestra20022002, vol.23, no.12
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