中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Positive flatband voltage shift in MOS capacitors on n-type GaNK. Matocha; T. P. Chow; R. J. Gutmann20022002, vol.23, no.2
Ferroelectric DRAM (FEDRAM) FET with metal/SrBi{sub}2Ta{sub}2O{sub}9/SiN/Si gate structureKwang-Ho Kim; Jin-Ping Han; Soon-Won Jung; Tso-Ping Ma20022002, vol.23, no.2
A capacitor-less 1T-DRAM cellS. Okhonin; M. Nagoga; J. M. Sallese; P. Fazan20022002, vol.23, no.2
The injection efficiency controlled IGBTS. Huang; G. A. J. Amaratunga; F. Udrea20022002, vol.23, no.2
Some measurement results for frequency-dependent inductance of IC interconnects on a lossy silicon substrateD. De Roest; H. Ymeri; S. Vandenberghe; M. Stucchi; Dominique Schreurs; K. Maex; Bart Nauwelaers20022002, vol.23, no.2
Sub-40 nm SOI V-groove n-MOSFETsJoerg Appenzeller; R. Martel; Ph. Avouris; J. Knoch; J. Scholvin; Jesus A. del Alamo; P. Rice; Paul Solomon20022002, vol.23, no.2
Current transport in metal/hafnium oxide/silicon structureW. J. Zhu; Tso-Ping Ma; Takashi Tamagawa; J. Kim; Y. Di20022002, vol.23, no.2
Three level charge pumping on a single interface trapLiviu Militaru; Pascal Masson; Georges Guegan20022002, vol.23, no.2
JVD silicon nitride as tunnel dielectric in p-channel flash memoryMin She; Tsu-Jae King; Chenming Hu; Wenjuan Zhu; Zhijiong Luo; Jin-Ping Han; Tso-Ping Ma20022002, vol.23, no.2
Systematic characterization of Cl{sub}2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTsD. Buttari; A. Chini; G. Meneghesso; E. Zanoni; B. Moran; S. Heikman; N. Q. Zhang; L. Shen; R. Coffie; S. P. DenBaars; U. K. Mishra20022002, vol.23, no.2
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