中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
First demonstration of monolithic InP-based HBT amplifier with PNP active loadDelong Cui; Dimitris Pavlidis; Shawn S. H. Hsu; Donald Sawdai; Patrick Chin; Tom Block20022002, vol.23, no.3
Systematic characterization of Cl{sub}2 reactive ion etching for gate recessing in AlGaN/GaN HEMTsD. Buttari; A. Chini; Guadenzio Meneghesso; Enrico Zanoni; Prashant Chavarkar; R. Coffie; N. Q. Zhang; S. Heikman; L. Shen; H. Xing; C. Zheng; Umesh K. Mishra20022002, vol.23, no.3
RF performance of diamond MISFETsHitoshi Umezawa; Hirotada Taniuchi; Hiroaki Ishizaka; Takuya Arima; Naoki Fujihara; Minoru Tachiki; Hiroshi Kawarada20022002, vol.23, no.3
Effects of post-deposition anneal on the electrical properties of Si{sub}3N{sub}4 gate dielectricW. H. Lin; K. L. Pey; Z. Dong; S. Y. -M. Choi; M. S. Zhou; T. C. Ang; C. H. Ang; W. S. Lau; J. H. Ye20022002, vol.23, no.3
Electromagnetic annealing for the 100 nm technology nodeK. Thompson; J. H. Booske; Y. B. Gianchandani; R. F. Cooper20022002, vol.23, no.3
High brightness green light emitting diodes with charge asymmetric resonance tunneling structureC. H. Chen; Y. K. Su; S. J. Chang; G. C. Chi; J. K. Sheu; J. F. Chen; C. H. Liu; Y. H. Liaw20022002, vol.23, no.3
A novel laser-processed self-aligned gate-overlapped LDD poly-Si TFTChing-Wei Lin; Chang-Ho Tseng; Ting-Kuo Chang; Chiung-Wei Lin; Wen-Tung Wang; Huang-Chung Cheng20022002, vol.23, no.3
Strong dependence of the inversion mobility of 4H and 6H SiC(0001) MOSFETs on the water content in pyrogenic re-oxidation annealingR. Kosugi; S. Suzuki; M. Okamoto; S. Harada; J. Senzaki; K. Fukuda20022002, vol.23, no.3
Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373 KM. Boutchich; K. Ziouche; P. Godts; D. Leclercq20022002, vol.23, no.3
A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applicationsShyh-Fann Ting; Yean-Kuen Fang; Wen-Tse Hsieh; Yong-Shiuan Tsair; Cheng-Nan Chang; Chun-Sheng Lin; Ming-Chun Hsieh; Hsin-Che Chiang; Jyh-Jier Ho20022002, vol.23, no.3
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