中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVDB. P. Yan; C. C. Hsu; X. Q. Wang; E. S. Yang20022002, vol.23, no.4
Add-on Cu/SiLK module for high Q inductorsSnezana Jenei; Stefaan Decoutere; Karen Maex; Bart Nauwelaers20022002, vol.23, no.4
Investigation of RuTiN and RuTiO diffusion barrier suggested by a new design concept for future high-density memory capacitorsDong-Soo Yoon; Jae Sung Roh20022002, vol.23, no.4
Low thermal-budget ultrathin NH{sub}3-annealed atomic-layer-deposited Si-nitride/SiO{sub}2 stack gate dielectrics with excellent reliabilityQuazi D. M. Khosru; A. Nakajima; T. Yoshimoto; S. Yokoyama20022002, vol.23, no.4
Microelectromechanical systems (MEMS) accelerometers using lead zirconate titanate thick filmsL. -P. Wang; K. Deng; L. Zou; R. Wolf; R. J. Davis; S. Trolier-McKinstry20022002, vol.23, no.4
High-density MIM capacitors using Al{sub}2O{sub}3 and AlTiO{sub}x dielectricsS. B. Chen; C. H. Lai; Albert Chin; J. C. Hsieh; J. Liu20022002, vol.23, no.4
Abnormal junction profile of silicided P{sup}+/n shallow junctions: a leakage mechanismChel-Jong Choi; Tae-Yeon Seong; Key-Min Lee; Joo-Hyoung Lee; Young-Jin Park; Hi-Deok Lee20022002, vol.23, no.4
Investigation of PECVD dielectrics for nondispersive metal-insulator-metal capacitorsS. Van Huylenbroeck; S. Decoutere; R. Venegas; S. Jenei; G. Winderickx20022002, vol.23, no.4
Half-bridge inverter using 4H-SiC gate turn-off thyristorsC. W. Tipton; S. B. Bayne; T. E. Griffin; C. J. Scozzie; B. Geil; A. K. Agarwal; J. Richmond20022002, vol.23, no.4
A model for N-well junction effect on gate-charging damage in PMOSFETsWallace Lin; George Sery20022002, vol.23, no.4
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