中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
A simple and accurate method for extracting substrate resistance of RF MOSFETsJeonghu Han; Minkyu Je; Hyungcheol Shin20022002, vol.23, no.7
Roughness-enhanced reliability of MOS tunneling diodesC. H. Lin; F. Yuan; C. R. Shie; K. F. Chen; B. C. Hsu; M. H. Lee; W. W. Pai; C. W. Liu20022002, vol.23, no.7
Normalized mutual integral difference method to extract threshold voltage of MOSFETsJin He; Xuemei Xi; Mansun Chan; Kanyu Cao; Chenming Hu; Yingxue Li; Xing Zhang; Ru Huang; Yangyuan Wang20022002, vol.23, no.7
Temperature dependence of hot-carrier-induced degradation in 0.1μm SOI nMOSFETs with thin oxideWen-Kuan Yeh; Wen-Han Wang; Yean-Kuen Fang; Fu-Liang Yang20022002, vol.23, no.7
A new process-variation-immunity method for extracting capacitance coupling coefficients in flash memory cellsCaleb Yu-Sheng Cho; Ming-Jer Chen; Jia-Han Lin; Chiou-Feng Chen20022002, vol.23, no.7
Design of 10-nm-scale recessed asymmetric Schottky barrier MOSFETsYaohui Zhang; Jun Wan; Kang L. Wang; Bich-Yen Nguyen20022002, vol.23, no.7
Comparison of electrical and reliability characteristics of different 14 A oxynitride gate dielectricsTung-Ming Pan; Hsiu-Shan Lin; Main-Gwo Chen; Chuan-Hsi Liu; Yih-Jau Chang20022002, vol.23, no.7
A new lateral anode switched thyristor (LAST) with current saturation and low turn-off timeYou-Sang Lee; Soo-Seong Kim; Jae-Keun Oh; Yearn-Ik Choi; Min-Koo Han20022002, vol.23, no.7
Effects of wet N{sub}2O oxidation on interface properties of 6H-SiC MOS capacitorsP. T. Lai; J. P. Xu; C. L. Chan20022002, vol.23, no.7
Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologiesSeiichiro Higashi; Daisuke Abe; Yasushi Hiroshima; Kazuyuki Miyashita; Takahiro Kawamura; Satoshi Inoue; Tatsuya Shimoda20022002, vol.23, no.7
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