中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2002, vol.23, no.1 2002, vol.23, no.10 2002, vol.23, no.11 2002, vol.23, no.12 2002, vol.23, no.2 2002, vol.23, no.3
2002, vol.23, no.4 2002, vol.23, no.5 2002, vol.23, no.6 2002, vol.23, no.7 2002, vol.23, no.8 2002, vol.23, no.9

题名作者出版年年卷期
A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagonSeiya Kasai; Hideki Hasegawa20022002, vol.23, no.8
Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETsAlexei Koudymov; Xuhong Hu; Kirill Simin; Grigory Simin; Mohammod Ali; Jinwei Yang; M. Asif Khan20022002, vol.23, no.8
GaN/AlGaN p-channel inverted heterostructure JFETMaxim Shatalov; Grigory Simin; Jianping Zhang; Vinod Adivarahan; Alexei Koudymov; Radhika Pachipulusu; M. Asif Khan20022002, vol.23, no.8
AlGaN/GaN HEMTs on SiC with f{sub}T of over 120 GHzV. Kumar; W. Lu; R. Schwindt; A. Kuliev; G. Simin; J. Yang; M. Asif Khan; Ilesanmi Adesida20022002, vol.23, no.8
SiO{sub}2/AlGaN/InGaN/GaN MOSDHFETsGrigory Simin; Alexei Koudymov; H. Fatima; Jianping Zhang; Jinwei Yang; M. Asif Khan; X. Hu; A. Tarakji; R. Gaska; Michael S. Shur20022002, vol.23, no.8
High linearity performances of GaN HEMT devices on silicon substrate at 4 GHzN. Vellas; C. Gaquiere; Y. Guhel; M. Werquin; F. Bue; R. Aubry; S. Delage; F. Semond; J. C. De Jaeger20022002, vol.23, no.8
Formation of Ni germano-silicide on single crystalline Si{sub}0.3Ge{sub}0.7/SiC. Y. Lin; W. J. Chen; C. H. Lai; Albert Chin; J. Liu20022002, vol.23, no.8
Elevated field insulator (ELFIN) process for device isolation of ultrathin SOI MOSFETs with tip silicon film less than 20 nmJong-Wook Lee; Yukisige Saitoh; Risho Koh; Tohru Mogami20022002, vol.23, no.8
High Q multilayer spiral inductor on silicon chip for 5 ～ 6 GHzGuo Lihui; Yu Mingbin; Chen Zhen; He Han; Zhang Yi20022002, vol.23, no.8
Germanium MOS capacitors incorporating ultrathin high-κ gate dielectricChi On Chui; Shriran Ramanthan; Baylor B. Triplett; Paul C. McIntyre; Krishna C. Saraswat20022002, vol.23, no.8
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