中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2002, vol.102, no.114 2002, vol.102, no.115 2002, vol.102, no.116 2002, vol.102, no.175 2002, vol.102, no.176 2002, vol.102, no.177
2002, vol.102, no.294 2002, vol.102, no.326 2002, vol.102, no.363 2002, vol.102, no.4 2002, vol.102, no.456 2002, vol.102, no.5
2002, vol.102, no.502 2002, vol.102, no.638 2002, vol.102, no.639 2002, vol.102, no.77

题名作者出版年年卷期
Recent progress of crystal growth technology for GaN substrateAkira Usui; Haruo Sunakawa; Atsushi A. Yamaguchi; Kenji Kobayashi20022002, vol.102, no.114
Epitaxial growth of GaN on NGO substrates by HVPE method - development of GaN substrates for fabrication of laser diodesMasashi Nakamura; Shinichi Sasaki; Eiichi Simizu; Tadaaki Asahi; Kenji Sato; Ryota Tanaka; Hitoshi Imai; Akihiro Wakahara; Akira Yosida20022002, vol.102, no.114
Study on stress distributions in air-bridged lateral epitaxial grown GaN with low dislocation densityAkihiko Ishibashi; Gaku Sugahara; Yasutoshi Kawaguchi; Toshiya Yokogawa20022002, vol.102, no.114
Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source systemRandolph Flauta; Toshiro Kasuya; Tadashi Ohachi; Motoi Wada20022002, vol.102, no.114
Preparation of ZrB{sub]2 single crystals and the substratesShigeki Otani20022002, vol.102, no.114
Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPEMasayuki Torikai; Tomonobu Kato; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki20022002, vol.102, no.114
Selective MOVPE growth and optical properties of a GaN/AlGaN stripe structure on (111) Si substrateTetsuo Narita; Tomonobu Kato; Yoshio Honda; Masahito Yamaguchi; Nobuhiko Sawaki20022002, vol.102, no.114
Growth of hexagonal GaN on Si(111) by using a porous GaN interlayerBablu K. Ghosh; Toru Tanikawa; Akihiro Hashimoto; Akio Yamamoto; Yoshifumi Ito20022002, vol.102, no.114
Growth of InGaN based LED on AlN/sapphire templatesHiroyoshi Ohmura; Hiroyasu Ishikawa; Takashi Egawa; Takashi Jimbo; Kanji Masui20022002, vol.102, no.114
Epitaxial growth of III-nitrides with dislocationsH. Miyake; R. Takeuchi; K. Hiramatsu; H. Naoi; Y. Iyechika; T. Maeda; T. Riemann; F. Bertram; J. Christen20022002, vol.102, no.114
123



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024