中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2002, vol.102, no.114 2002, vol.102, no.115 2002, vol.102, no.116 2002, vol.102, no.175 2002, vol.102, no.176 2002, vol.102, no.177
2002, vol.102, no.294 2002, vol.102, no.326 2002, vol.102, no.363 2002, vol.102, no.4 2002, vol.102, no.456 2002, vol.102, no.5
2002, vol.102, no.502 2002, vol.102, no.638 2002, vol.102, no.639 2002, vol.102, no.77

题名作者出版年年卷期
Formation of GaN self-organized nanotips and its field emissionYuusuke Terada; Tatsuhiro Urushido; Harumasa Yoshida; Hideto Miyake; Kazumasa Hiramatu20022002, vol.102, no.116
Electron emission from polycrystalline GaN on metal substrateT. Yamanaka; H. Tampo; M. Hashimoto; H. Asahi20022002, vol.102, no.116
Fabrication and characterization of AlGaN-based resonant cavity-enhanced ultraviolet photodetectorsMasao Yonemaru; Akihiko Kikuchi; Katsumi Kishino20022002, vol.102, no.116
AlGaN based PIN diode detector and behavior at high temperatureAkira Hirano; Miwa Yamamoto; Katsuhiko Nishida; Motoaki Iwaya; Satoru Kamiyama; Hiroshi Amano; Isamu Akasaki20022002, vol.102, no.116
Application of hydrogenated polycrystalline gallium nitride to UV photodiodes and light emitting devicesShigeru Yagi20022002, vol.102, no.116
Growth of GaN/AlN quantum wells and characteristics of intersubband transitionNorio Iizuka; Kei Kaneko; Nobuo Suzuki20022002, vol.102, no.116
Observation of intersubband transition at 1.2～1.6μm optical communication wavelength in AlN/GaN superlatticesAkihiko Kikuchi; Hidekazu Kanazawa; Tetsuo Tachibana; Katsumi Kishino20022002, vol.102, no.116
Growth of AlN/GaN quantum-cascade structure by hot wall epitaxy and its structural characterizationA. Ishida; H. Nagasawa; Y. Inoue; H. Tatsuoka; H. Fujiyasu; H. Kan; H. Makino; T. Yao20022002, vol.102, no.116
Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodesAtsushi Fujiwara; Hwi Jae Lee; Akiko Mizobata; Hajime Asahi20022002, vol.102, no.116
Luminescence characteristics of GaInN based LEDs and high power devicesSatoshi Watanabe20022002, vol.102, no.116
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