中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2002, vol.102, no.114 2002, vol.102, no.115 2002, vol.102, no.116 2002, vol.102, no.175 2002, vol.102, no.176 2002, vol.102, no.177
2002, vol.102, no.294 2002, vol.102, no.326 2002, vol.102, no.363 2002, vol.102, no.4 2002, vol.102, no.456 2002, vol.102, no.5
2002, vol.102, no.502 2002, vol.102, no.638 2002, vol.102, no.639 2002, vol.102, no.77

题名作者出版年年卷期
Growth and electronic properties of thick CdTe layers on GaAs by MOVPEYasuhiro Kawauchi; Tomoaki Ishiguro; Hiroshi Morishita; Takashi Mabuchi; Yasunori Agata; Madan Niraula; Kazuhito Yasuda20022002, vol.102, no.77
Growth and electronic properties of thick CdTe layers on GaAs/Si by MOVPEHiroshi Morishita; Tomoaki Ishiguro; Yasuhiro Kawauchi; Takashi Mabuch; Yasunori Agata; Madan Niraula; Kazuhito Yasuda20022002, vol.102, no.77
Low temperature growth of InGaAs layers on GaAs substrates by metalorganic chemical vapor depositionH. Iwahori; K. Kobayashi; N. Kuroyanagi; K. Kuwahara; S. Fuke; Y. Takano20022002, vol.102, no.77
Low-temperature MBE growth and optical properties of Er-doped GaAsHidenobu Maki; Takahiro Sonoyama; Kazuo Ogawa; Masao Tabuchi; Yosikazu Takeda20022002, vol.102, no.77
Fabrication of InAs quantum dots by droplet epitaxy on InGaAsP lattice-matched with InP substrateRyo Oga; Woo-Sik Lee; Yasufumi Fujiwara; Yoshikazu Takeda20022002, vol.102, no.77
Characterization of GaAs solar cell on Si by epitaxial lift off techniquesN. Okada; H. Taguchi; K. Itakura; T. Soga; T. Jimbo; M. Umeno20022002, vol.102, no.77
Electroluminescence properties of Er, O-codoped GaAs/GaInP grown by MOVPEAtsushi Koizumi; Yasufumi Fujiwara; Kentaro Inoue; Taketoshi Yoshikane; Yoshikazu Takeda20022002, vol.102, no.77
C-doped GaAsSb grown by MOCVD with CBr{sub}4Yasuhiro Oda; Noriyuki Watanabe; Takashi Kobayashi20022002, vol.102, no.77
Investigation of sputtering gases on IBS growth of Si and GeTakaharu Ikeda; Haruhiko Konta; Makoto Sugino; Kimihiro Sasaki; Tomonobu Hata20022002, vol.102, no.77
The effects of low temperature growth and IBAD on C incorporation into GeC epilayers on Si(001) substratesM. Okinaka; K. Miyatake; Y. Hamana; T. Tokuda; J. Ohta; M. Nunoshita20022002, vol.102, no.77
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