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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

全部

1998	1999	2000	2001	2002	2003
2004	2005	2006	2007

2003, vol.24, no.1	2003, vol.24, no.10	2003, vol.24, no.11	2003, vol.24, no.12	2003, vol.24, no.2	2003, vol.24, no.3
2003, vol.24, no.4	2003, vol.24, no.5	2003, vol.24, no.6	2003, vol.24, no.7	2003, vol.24, no.8	2003, vol.24, no.9

题名

作者

出版年

年卷期

A novel InGaP/InGaAs/GaAs doubleδ-doped pHEMT with camel-like gate structure

Jung-Hui Tsai

2003

2003, vol.24, no.1

Explanation of anomalously high current gain observed in GaN based bipolar transistors

H. Xing; D. Jena; M. J. W. Rodwell; U. K. Mishra

2003

2003, vol.24, no.1

Innovative nitride passivated pseudomorphic GaAs HEMTs

Y. C. Chou; R. Lai; G. P. Li; Jun Hua; P. Nam; R. Grundbacher; H. K. Kim; Y. Ra; M. Biedenbender; E. Ahlers; M. Barsky; A. Oki; D. Streit

2003

2003, vol.24, no.1

A gate-charging model for ILD related plasma processes in MOSFETs

Wallace Lin; George Sery

2003

2003, vol.24, no.1

Improved hydrogen-sensitive properties of MISiC Schottky sensor with thin NO-grown oxynitride as gate insulator

J. P. Xu; P. T. Lai; D. G. Zhong; C. L. Chan

2003

2003, vol.24, no.1

Amorphous selenium photodetector driven by diamond cold cathode

Y. Suzuki; H. Yamaguchi; K. Oonuki; Y. Okamura; K. Okano

2003

2003, vol.24, no.1

High-performance poly-Si TFTs on plastic substrates using a nano-structured separation layer approach

Youngchul Lee; Handong Li; Stephen J. Fonash

2003

2003, vol.24, no.1

High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing

Soo Young Yoon; Nigel Young; P. J. van der Zaag; David McCulloch

2003

2003, vol.24, no.1

Compensated back-channel TFTs in hydrogenated amorphous silicon

J. M. Shannon; E. G. Gerstner

2003

2003, vol.24, no.1

Low RF noise and power loss for ion-implanted Si having an improved implantation process

K. T. Chan; Albert Chin; S. P. McAlister; C. Y. Chang; J. Liu; S. C. Chien; D. S. Duh; W. J. Lin

2003

2003, vol.24, no.1