中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
A Novel Half-Adder Circuit Based on Nanometric Ballistic Y-Branched JunctionsS. Reitzenstein; L. Worschech; A. Forchel20032003, vol.24, no.10
Dual Work Function Metal Gates Using Full Nickel Silicidation of Doped Poly-SiJ. H. Sim; H. C. Wen; J. P. Lu; D. L. Kwong20032003, vol.24, no.10
A Novel Technology to Form Self-Aligned Emitter Ledge for Heterojunction Bipolar TransistorsHong Wang; Geok-Ing Ng20032003, vol.24, no.10
Flicker Noise of GaN-Based Heterostructure Field-Effect Transistors With Si-Doped AlGaN Carrier Injection LayerYan-Kuin Su; Sun-Chin Wei; Ruey-Lue Wang; Shoou-Jinn Chang; Chih-Hsin Ko; Ta-Ming Kuan20032003, vol.24, no.10
Fabrication of InGaP/Al{sub}0.98Ga{sub}0.02As/GaAs Oxide-Confined Collector-Up Heterojunction Bipolar TransistorsW. B. Chen; Y. K. Su; C. L. Lin; H. C. Wang; S. M. Chen; J. Y. Su; M. C. Wu20032003, vol.24, no.10
High-Performance, Metamorphic In{sub}xGa{sub}x - xAs Tunnel Diodes Grown by Molecular Beam EpitaxyO. Kwon; M. M. Jazwiecki; R. N. Sacks; S. A. Ringel20032003, vol.24, no.10
Investigation of NiSi and TiSi as CMOS Gate MaterialsPeiqi Xuan; Jeffrey Bokor20032003, vol.24, no.10
AlGaN-GaN HEMTs on SiC With CW Power Performance of >4 W/mm and 23% PAE at 35 GHzCathy Lee; Paul Saunier; Jinwei Yang; M. Asif Khan20032003, vol.24, no.10
Self-Heating Induced Soft Degradation of the Early Voltage in SiGe:C HBTsM. W. Xu; A. Sibaja-Hernandez; A. Sadovnikov; S. Decoutere20032003, vol.24, no.10
Bistable Gated Bipolar DeviceRussell Duane; Alan Mathewson; Ann Concannon20032003, vol.24, no.10
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