中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
High Performance 0.14μm Gate-Length AlGaN/GaN Power HEMTs on SiCG. H. Jessen; R. C. Fitch; J. K. Gillespie; G. D. Via; N. A. Moser; M. J. Yannuzzi; A. Crespo; J. S. Sewell;, R. W. Dettmer; T. J. Jenkins; R. F. Davis; J. Yang, M. Asif Khan; S. C. Binari20032003, vol.24, no.11
Dynamic Current-Voltage Characteristics of III-N HFETsKoudymov, G. Simin; M. Asif Khan; A. Tarakji, R. Gaska; M. S. Shur20032003, vol.24, no.11
Omnidirectional Reflective Contacts for Light-Emitting DiodesT. Gessmann; E. F. Schubert; J. W. Graff; K. Streubel; C. Karnutsch20032003, vol.24, no.11
Oxide Reliability of Drain Engineered I/O NMOS From Hot Carrier InjectionYuhao Luo; Deepak Nayak; Daniel Gitlin; Ming-Yin Hao; Chia-Hung Kao; Chien-Hsun Wang20032003, vol.24, no.11
Hall Mobility in Hafnium Oxide Based MOSFETs: Charge EffectsL.-A. Ragnarsson; N. A. Bojarczuk; J. Karasinski; S. Guha20032003, vol.24, no.11
Successive Breakdown Events and Their Relation With Soft and Hard Breakdown ModesE. Y. Wu; J. Sune20032003, vol.24, no.11
High Voltage (>1 kV) and High Current Gain (32) 4H-SiC Power BJTs Using Al-Free Ohmic Contact to the BaseYanbin Luo; Jianhui Zhang; Petre Alexandrov; Leonid Fursin; Jian H. Zhao; Terry Burke20032003, vol.24, no.11
A Metal/Polysilicon Damascene Gate Technology for RF Power LDMOSFETsJames G. Fiorenza; Jorg Scholvin; Jesus A. del Alamo20032003, vol.24, no.11
A Fast Switching Segmented Anode NPN Controlled LIGBTShyam Hardikar; R. Tadikonda; M. Sweet; K. Vershinin; E. M. Sankara Narayanan20032003, vol.24, no.11
Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column WidthXin Yang; Yung C. Liang; Ganesh S. Samudra20032003, vol.24, no.11
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