中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
A high-density MIM capacitor (13 fF/μm{sup}2) using ALD HfO{sub}2 dielectricsXiongfei Yu; Chunxiang Zhu; Hang Hu; Albert Chin; M. F. Li; Byung Jin Cho; Dim-Lee Kwong; P. D. Foo; Ming Bin Yu20032003, vol.24, no.2
Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistorsVenkatesh P. Gopinath; Arvind Kamath; Mohammad Mirabedini; Verne-Hornback; Ynhi Le; Alfred Badowski; Wen-Chin Yeh20032003, vol.24, no.2
SiGe heterostructure field-effect transistor using V-shaped confining potential wellYu Min Lin; San Lein Wu; Shoou Jinn Chang; Shinji Koh; Yasuhiro Shiraki20032003, vol.24, no.2
A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applicationsCe Li; J. S. Duster; Kevin T. Kornegay20032003, vol.24, no.2
Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cellAlain Chun-Keung Chan; Mansun Chan20032003, vol.24, no.2
An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal displayJin Jang; Kyu Man Kim; Kyu Sik Cho; Byoung Kwon Choo; Gregory Um20032003, vol.24, no.2
1710-V 2.77-mΩcm{sup}2 4H-SiC trenched and implanted vertical junction field-effect transistorsJian H. Zhao; Kiyoshi Tone; Petre Alexandrov; Leonid Fursin; Maurice Weiner20032003, vol.24, no.2
A novel ultrathin vertical channel NMOSFET with asymmetric fully overlapped LDDHaitao Liu; Zhibin Xiong; Johnny K. O. Sin20032003, vol.24, no.2
Origin of the threshold voltage instability in SiO{sub}2/HfO{sub}2 dual layer gate dielectricsA. Kerber; E. Cartier; L. Pantisano; R. Degraeve; T. Kauerauf; Y. Kim; A. Hou; G. Groeseneken; H. E. Maes; U. Schwalke20032003, vol.24, no.2
On the body-source built-in potential lowering of SOI MOSFETsPin Su; Samuel K. H. Fung; Peter W. Wyatt; Hui Wan; Ali M. Niknejad; Mansun Chan; Chenming Hu20032003, vol.24, no.2
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