中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
GaN MOS device using SiO{sub}2-Ga{sub}2O{sub}3 insulator grown by photoelectrochemical oxidation methodChing-Ting Lee; Hsin-Ying Lee; Hong-Wei Chen20032003, vol.24, no.2
Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substratesNils G. Weimann; Michael J. Manfra; Thomas Wachtler20032003, vol.24, no.2
MIM capacitors using atomic-layer-deposited high-k (HfO{sub}2)(sub)(1-x)(Al{sub}2O{sub}3){sub}x dielectricsHang Hu; Chunxiang Zhu; Xiongfei Yu; Albert Chin; M. F. Li; Byung Jin Cho; Dim-Lee Kwong; P. D. Foo; Ming Bin Yu; Xinye Liu; Jerry Winkler20032003, vol.24, no.2
A high-density MIM capacitor (13 fF/μm{sup}2) using ALD HfO{sub}2 dielectricsXiongfei Yu; Chunxiang Zhu; Hang Hu; Albert Chin; M. F. Li; Byung Jin Cho; Dim-Lee Kwong; P. D. Foo; Ming Bin Yu20032003, vol.24, no.2
Impact of the interaction between nitrogen implant and NO anneal on narrow-width transistorsVenkatesh P. Gopinath; Arvind Kamath; Mohammad Mirabedini; Verne-Hornback; Ynhi Le; Alfred Badowski; Wen-Chin Yeh20032003, vol.24, no.2
SiGe heterostructure field-effect transistor using V-shaped confining potential wellYu Min Lin; San Lein Wu; Shoou Jinn Chang; Shinji Koh; Yasuhiro Shiraki20032003, vol.24, no.2
A nonvolatile semiconductor memory device in 6H-SiC for harsh environment applicationsCe Li; J. S. Duster; Kevin T. Kornegay20032003, vol.24, no.2
Effects of floating body on double polysilicon partially depleted SOI nonvolatile memory cellAlain Chun-Keung Chan; Mansun Chan20032003, vol.24, no.2
An amorphous silicon triode rectifier switching device for active-matrix liquid-crystal displayJin Jang; Kyu Man Kim; Kyu Sik Cho; Byoung Kwon Choo; Gregory Um20032003, vol.24, no.2
1710-V 2.77-mΩcm{sup}2 4H-SiC trenched and implanted vertical junction field-effect transistorsJian H. Zhao; Kiyoshi Tone; Petre Alexandrov; Leonid Fursin; Maurice Weiner20032003, vol.24, no.2
123



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024