中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
A novel InP/InGaAs TEBT for ultralow current operationsChun-Yuan Chen; Shiou-Ying Cheng; Wen-Hui Chiou; Hung-Ming Chuang; Wen-Chau Liu20032003, vol.24, no.3
Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodesS. J. Chang; C. H. Chen; Y. K. Su; J. K. Sheu; W. C. Lai; J. M. Tsai; C. H. Liu; S. C. Chen20032003, vol.24, no.3
A 22-nm damascene-gate MOSFET fabrication with 0.9-nm EOT and local channel implantationJeong-Dong Choe; Chang-Sub Lee; Sung-Ho Kim; Sung-Min Kim; Shin-Ae Lee; Ju-Won Lee; You-Gyun Shin; Donggun Park; Kinam Kim20032003, vol.24, no.3
A 0.8-dB insertion-loss, 17.4-dBm power-handling, 5-GHz transmit/receive switch with DETs in a 0.18-μm CMOS processTakahiro Ohnakado; Satoshi Yamakawa; Takaaki Murakami; Akihiko Furukawa; Kazuyasu Nishikawa; Eiji Taniguchi; Hiroomi Ueda; Masayoshi Ono; Jun Tomisawa; Yoshikazu Yoneda; Yasushi Hashizume; Kazuyuki Sugahara; Tatsuo Oomori20032003, vol.24, no.3
What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?G. Dambrine; C. Raynaud; D. Lederer; M. Dehan; O. Rozeaux; M. Vanmackelberg; F. Danneville; S. Lepilliet; J. -P. Raskin20032003, vol.24, no.3
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETsJeong-Soo Lee; Yang-Kyu Choi; Daewon Ha; Sriram Balasubramanian; Tsu-Jae King; Jeffrey Bokor20032003, vol.24, no.3
Gate bias dependence of the substrate signal coupling effect in RF MOSFETsMinkyu Je; Hyungcheol Shin20032003, vol.24, no.3
Fluorine-assisted super-halo for sub-50-nm transistorsKaiping Liu; Jeff Wu; Jihong Chen; Amitabh Jain20032003, vol.24, no.3
Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performanceEmanuele Centurioni; Daniele Iencinella20032003, vol.24, no.3
Improved reliability of low-temperature polysilicon TFT by post-annealing gate oxideSeok-Woo Lee; Eugene Kim; Sang-Soo Han; Hye Sun Lee; Duk-Chul Yun; Kyoung Moon Lim; Myoung-Su Yang; Chang-Dong Kim20032003, vol.24, no.3
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