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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

全部

1998	1999	2000	2001	2002	2003
2004	2005	2006	2007

2003, vol.24, no.1	2003, vol.24, no.10	2003, vol.24, no.11	2003, vol.24, no.12	2003, vol.24, no.2	2003, vol.24, no.3
2003, vol.24, no.4	2003, vol.24, no.5	2003, vol.24, no.6	2003, vol.24, no.7	2003, vol.24, no.8	2003, vol.24, no.9

题名

作者

出版年

年卷期

Improvement of InGaN/GaN laser diodes by using a Si-doped In{sub}0.23Ga{sub}0.77N/GaN short-period superlattice tunneling contact layer

Ru-Chin Tu; Chun-Ju Tun; J. K. Sheu; Wei-Hong Kuo; Te-Chung Wang; Ching-En Tsai; Jung-Tsung Hsu; Jim Chi; Gou-Chung Chi

2003

2003, vol.24, no.4

GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition

P. D. Ye; G. D. Wilk; J. Kwo; B. Yang; H. -J. L. Gossmann; M. Frei; S. N. G. Chu; J. P. Mannaerts; M. Sergent; M. Hong; K. K. Ng; J. Bude

2003

2003, vol.24, no.4

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

S. J. Chang; M. L. Lee; J. K. Sheu; W. C. Lai; Y. K. Su; C. S. Chang; C. J. Kao; G. C. Chi; J. M. Tsai

2003

2003, vol.24, no.4

Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

C. H. Choi; T. S. Jeon; R. Clark; D. L. Kwong

2003

2003, vol.24, no.4

Electrical characteristics of epitaxially grown SrTiO{sub}3 on silicon for metal-insulator-semiconductor gate dielectric applications

Sanghun Jeon; Frederick J. Walker; Curtis A. Billman; Rodney A. McKee; Hyunsang Hwang

2003

2003, vol.24, no.4

Indium out-diffusion from silicon during rapid thermal annealing

Hong-Jyh Li; Joe Bennett; Peter Zeitzoff; Taras A. Kirichenko; Sanjay K. Banerjee; Dietmar Henke

2003

2003, vol.24, no.4

Integrated solenoid inductors with patterned, sputter-deposited Cr/Fe{sub}10Co{sub}90/Cr ferromagnetic cores

Yan Zhuang; B. Rejaei; E. Boellaard; M. Vroubel; J. N. Burghartz

2003

2003, vol.24, no.4

RF MEMS switches fabricated on microwave-laminate printed circuit boards

Hung-Pin Chang; Jiangyuan Qian; Bedri A. Cetiner; F. De Flaviis; Mark Bachman; G. P. Li

2003

2003, vol.24, no.4

Physical and electrical characteristics of HfN gate electrode for advanced MOS devices

H. Y. Yu; H. F. Lim; J. H. Chen; M. F. Li; Chunxiang Zhu; C. H. Tung; A. Y. Du; W. D. Wang; D. Z. Chi; D. -L. Kwong

2003

2003, vol.24, no.4

A novel germanium doping method for fabrication of high-performance P-channel poly-Si{sub}(1-x)Ge{sub}x TFT by excimer laser crystallization

Ting-Kuo Chang; Fang-Tsun Chu; Ching-Wei Lin; Chang-Ho Tseng; Huang-Chung Cheng

2003

2003, vol.24, no.4