中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
Improvement of InGaN/GaN laser diodes by using a Si-doped In{sub}0.23Ga{sub}0.77N/GaN short-period superlattice tunneling contact layerRu-Chin Tu; Chun-Ju Tun; J. K. Sheu; Wei-Hong Kuo; Te-Chung Wang; Ching-En Tsai; Jung-Tsung Hsu; Jim Chi; Gou-Chung Chi20032003, vol.24, no.4
Electrical characteristics of epitaxially grown SrTiO{sub}3 on silicon for metal-insulator-semiconductor gate dielectric applicationsSanghun Jeon; Frederick J. Walker; Curtis A. Billman; Rodney A. McKee; Hyunsang Hwang20032003, vol.24, no.4
Indium out-diffusion from silicon during rapid thermal annealingHong-Jyh Li; Joe Bennett; Peter Zeitzoff; Taras A. Kirichenko; Sanjay K. Banerjee; Dietmar Henke20032003, vol.24, no.4
Integrated solenoid inductors with patterned, sputter-deposited Cr/Fe{sub}10Co{sub}90/Cr ferromagnetic coresYan Zhuang; B. Rejaei; E. Boellaard; M. Vroubel; J. N. Burghartz20032003, vol.24, no.4
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETsFelice Crupi; Ben Kaczer; Guido Groeseneken; A. De Keersgieter20032003, vol.24, no.4
Correcting effective mobility measurements for the presence of significant gate leakage currentPeter M. Zeitzoff; Chadwin D. Young; George A. Brown; Yudong Kim20032003, vol.24, no.4
Statistics of successive breakdown events in gate oxidesJ. Sune; E. Y. Wu20032003, vol.24, no.4
Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETsC. W. Tsai; M. C. Chen; S. H. Gu; Tahui Wang20032003, vol.24, no.4
(110) strained-SOI n-MOSFETs with higher electron mobilityT. Mizuno; N. Sugiyama; T. Tezuka; S. Takagi20032003, vol.24, no.4
High performance fully-deleted tri-gate CMOS transistorsB. S. Doyle; S. Datta; M. Doczy; S. Hareland; B. Jin; J. Kavalieros; T. Linton; A. Murthy; R. Rios; R. Chau20032003, vol.24, no.4
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