中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
Large-signal linearity in III-N MOSDHFETsA. Tarakji; H. Fatima; X. Hu; J. -P. Zhang; G. Simin; M. Asif Khan; M. S. Shur; R. Gaska20032003, vol.24, no.6
A study on the transient effect due to hydrogen passivation in InGaP HBTsShao-You Deng; Chang-Han Wu; Joseph Ya-Min Lee20032003, vol.24, no.6
Thermal management of AlGaN-GaN HFETs on sapphire using flip-chip bonding with epoxy underfillJie Sun; H. Fatima; A. Koudymov; A. Chitnis; X. Hu; H. -M. Wang; J. Zhang; G. Simin; J. Yang; M. Asif Khan20032003, vol.24, no.6
Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In{sub}0.75Ga{sub}0.25As channelY. C. Chou; D. Leung; R. Lai; R. Grundbacher; M. Barsky; Q. Kan; R. Tsai; M. Wojtowicz; D. Eng; L. Tran; T. Block; P. H. Liu; M. Nishimoto; A. Oki20032003, vol.24, no.6
A novel double-recessed 0.2-μm T-gate process for heterostructure InGaP-InGaAs doped-channel FET fabricationMing-Jyh Hwu; Hsien-Chin Chiu; Shih-Cheng Yang; Yi-Jen Chan20032003, vol.24, no.6
Ultra high-speed InP-InGaAs SHBTs with f{sub}max of 478 GHzDaekyu Yu; Kyungho Lee; Bumman Kim; D. Ontiveros; K. Vargason; J. M. Kuo; Y. C. Kao20032003, vol.24, no.6
PVD HfO{sub}2 for high-precision MIM capacitor applicationsSun Jung Kim; Byung Jin Cho; Ming Fu Li; Xiongfei Yu; Chunxiang Zhu; Albert Chin; Dim-Lee Kwong20032003, vol.24, no.6
A new Pd-oxide-Al{sub}0.3Ga{sub}0.7As MOS hydrogen sensorChun-Tsen Lu; Kun-Wei Lin; Huey-Ing Chen; Hung-Ming Chuang; Chun-Yuan Chen; Wen-Chau Liu20032003, vol.24, no.6
Different nature of process-induced and stress-induced defects in thin SiO{sub}2 layersG. Cellere; M. G. Valentini; L. Pantisano; K. P. Cheung; A. Paccagnella20032003, vol.24, no.6
High current gain 4H-SiC NPN bipolar junction transistorsChih-Fang Huang; James A. Cooper, Jr.20032003, vol.24, no.6
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