中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2003, vol.24, no.1 2003, vol.24, no.10 2003, vol.24, no.11 2003, vol.24, no.12 2003, vol.24, no.2 2003, vol.24, no.3
2003, vol.24, no.4 2003, vol.24, no.5 2003, vol.24, no.6 2003, vol.24, no.7 2003, vol.24, no.8 2003, vol.24, no.9

题名作者出版年年卷期
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradationHyungtak Kim; Richard M. Thompson; Vinayak Tilak; Thomas R. Prunty; James R. Shealy; Lester F. Eastman20032003, vol.24, no.7
Thermal modeling and measurement of GaN-based HFET devicesJeong Park; Moo Whan Shin; Chin C. Lee20032003, vol.24, no.7
Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1mAWalid Hafez; Jie-Wei Lai; Milton Feng20032003, vol.24, no.7
Measurement of base and collector transit times in thin-base InGaAs/InP HBTM. Kahn; S. Blayac; M. Riet; Ph. Berdaguer; V. Dhalluin; F. Alexandre; J. Godin20032003, vol.24, no.7
Wideband DHBTs using a graded carbon-doped InGaAs baseM. Dahlstrom; X. -M. Fang; D. Lubyshev; M. Urteaga; S. Krishnan; N. Parthasarathy; Y. M. Kim; Y. Wu; J. M. Fastenau; W. K. Liu; M. J. W. Rodwell20032003, vol.24, no.7
Vertical scaling of 0.25-μm emitter InP/InGaAs single heterojunction bipolar transistors with f{sub}T of 452GHzWalid Hafez; Jie-Wei Lai; Milton Feng20032003, vol.24, no.7
Effect of the composition on the electrical properties of TaSi{sub}xN{sub}y metal gate electrodesYou-Seok Suh; Greg P. Heuss; Jae-Hoon Lee; Veena Misra20032003, vol.24, no.7
Lanthanide (Tb)-doped HfO{sub}2 for high-density MIM capacitorsSun Jung Kim; Byung Jin Cho; Ming-Fu Li; Chunxiang Zhu; Albert Chin; Dim-Lee Kwong20032003, vol.24, no.7
Observation of nitrogen-enhanced doping deactivation at the polysilicon-oxynitride interface of pMOSFETs with 12-A gate dielectricsKhaled Z. Ahmed; Philip A. Kraus; Chris Olsen; Steven Hung; Faran Nouri20032003, vol.24, no.7
Passivation of interface-states in large-area Si devices using hydrogen implantationAvid Kamgar; D. P. Monroe; W. M. Mansfield20032003, vol.24, no.7
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