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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

全部

1998	1999	2000	2001	2002	2003
2004	2005	2006	2007

2003, vol.24, no.1	2003, vol.24, no.10	2003, vol.24, no.11	2003, vol.24, no.12	2003, vol.24, no.2	2003, vol.24, no.3
2003, vol.24, no.4	2003, vol.24, no.5	2003, vol.24, no.6	2003, vol.24, no.7	2003, vol.24, no.8	2003, vol.24, no.9

题名

作者

出版年

年卷期

Degradation Dynamics of Ultrathin Gate Oxides Subjected to Electrical Stress

Enrique Miranda; Andrea Cester

2003

2003, vol.24, no.9

High-Isolation Bonding Pad Design for Silicon RFIC up to 20 GHz

Sang Lam; Philip K. T. Mok; Ping K. Ko; Mansim Chan

2003

2003, vol.24, no.9

A Reassessment of ac Hot-Carrier Degradation in Deep-Submicrometer LDD N-MOSFET

D. S. Ang; C. H. Ling

2003

2003, vol.24, no.9

Polycrystalline Silicon Thin-Film Transistors Fabricated by Rapid Joule Heating Method

Y. Kaneko; N. Andoh; T. Sameshima

2003

2003, vol.24, no.9

A Low-Temperature Metal-Doping Technique for Engineering the Gate Electrode of Replacement Metal Gate CMOS Transistors

James Pan; Christy Woo; Minn-Van Ngo; Paul Besser; John Pellerin; Qi Xiang; Ming-Ren Lin

2003

2003, vol.24, no.9

High-Performance Pt/SrBi{sub}2Ta{sub}2O{sub}9/HfO{sub}2/Si Structure for Nondestructive Readout Memory

Chao-Hsin Chien; Ding-Yeong Wang; Ming-Jui Yang; Peer Lehnen; Ching-Chich Leu; Shiow-Huey Chuang; Tiao-Yuan Huang; C. Y. Chang

2003

2003, vol.24, no.9

On the Thermal Stability of Atomic Layer Deposited TiN as Gate Electrode in MOS Devices

J. Westlinder; T. Schram; L. Pantisano; E. Cartier; A. Kerber; G. S. Lujan; J. Olsson; G. Groeseneken

2003

2003, vol.24, no.9

Study of Nickel Silicide Contact on Si/Si{sub}(1-x)Ge{sub}x

Tsung-Hsi Yang; Guangli Luo; Edward Yi Chang; Member; IEEE; Tsung-Yeh Yang; Hua-Chou Tseng; Chun-Yen Chang

2003

2003, vol.24, no.9

0.6-eV Bandgap In{sub}0.69Ga{sub}0.31As Thermophotovoltaic Devices Grown on InAs{sub}yP{sub}(1-y) Step-Graded Buffers by Molecular Beam Epitaxy

M. K. Hudait; Y. Lin; M. N. Palmisiano; S. A. Ringel

2003

2003, vol.24, no.9

Submicron Gate Si{sub}3N{sub}4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors

V. Adivarahan; M. Gaevski; W. H. Sun; H. Fatima; A. Koudymov; S. Saygi; G. Simin; J. Yang; M. Afir Khan; A. Tarakji; M. S. Shur; R. Gaska

2003

2003, vol.24, no.9