中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2004, vol.25, no.1 2004, vol.25, no.10 2004, vol.25, no.11 2004, vol.25, no.12 2004, vol.25, no.2 2004, vol.25, no.3
2004, vol.25, no.4 2004, vol.25, no.5 2004, vol.25, no.6 2004, vol.25, no.7 2004, vol.25, no.8 2004, vol.25, no.9

题名作者出版年年卷期
Thermal Constraints for Heterostructure Barrier VaractorsMattias Ingvarson; Byron Alderman; Arne Oistein Olsen; Josip Vukusic; Jan Stake20042004, vol.25, no.11
Thermal Instability of Effective Work Function in Metal/High-K Stack and Its Material DependenceMoon Sig Joo; Byung Jin Cho; N. Balasubramanian; Dim-Lee Kwong20042004, vol.25, no.11
Threshold Voltage (V{sub}(th)) Instability in HfO{sub}2 High-k Gate Stacks With TiN Metal Gate: Comparison Between NH{sub}3 and O{sub}3 Interface TreatmentsXuguang Wang; Jeff Peterson; Prashant Majhi; Mark I. Gardner; Dim-Lee Kwong20042004, vol.25, no.11
The impact of aluminum top layer on inductors integrated in an advanced CMOS copper backendL. F. Tiemeijer; R. J. Havens; Y. Bouttement; H. J. Pranger20042004, vol.25, no.11
MOS Characteristics of Substituted Al Gate on High-K DielectricChang Seo Park; Byung Jin Cho; Dim-Lee Kwong20042004, vol.25, no.11
Improvement of Brightness Uniformity by AC Driving Scheme for AMOLED DisplayYen-Chung Lin; Han-Ping D. Shieh20042004, vol.25, no.11
Comparison of Threshold-Voltage Shifts for Uniaxial and Biaxial Tensile-Stressed n-MOSFETsJi-Song Lim; Scott E. Thompson; Jerry G. Possum20042004, vol.25, no.11
Successful Enhancement of Lifetime for SiO{sub}2 on 4H-SiC by N{sub}2O AnnealKeiko Fujihira; Naruhisa Miura; Katsuomi Shiozawa; Masayuki Imaizumi; Ken-ichi Ohtsuka; Tetsuya Takami20042004, vol.25, no.11
Heterodimensional FET With Split DrainTongwei Cheng; A. Mathewson; M. P. Kennedy; J. C. Greer20042004, vol.25, no.11
Self-Align Recessed Source Drain Ultrathin Body SOI MOSFETZhikuan Zhang; Shengdong Zhang; Mansun Chan20042004, vol.25, no.11
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