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期刊
ISSN
0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:电子装置
收藏年代
2000~2024
关联期刊
参考译名
收藏年代
電子情報通信学会技術研究報告
电子信息通信学会技术研究报告:电子装置
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2004, vol.104, no.152
2004, vol.104, no.153
2004, vol.104, no.154
2004, vol.104, no.358
2004, vol.104, no.40
2004, vol.104, no.519
2004, vol.104, no.520
题名
作者
出版年
年卷期
The Dopant Diffusion Characteristics of the PH{sub}3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI
Ki-Soo Kim; Joo-Kyung Song; Ohyun Kim
2004
2004, vol.104, no.152
Red Shift due to the Cross-link and Blue Shift due to the Bond-break in Organic Materials
Teresa OH; Kyungsik Kim; Kwangman LEE; Chikyu CHOI
2004
2004, vol.104, no.152
3D Cell Structure for Low Power and High Performance DRAM, FCAT (Fin-Channel-Array Transistor)
Jong-Wook Lee; Deok-Hyung Lee; Yu-Gyun Shin; U-In Chung; Joo-Tae Moon
2004
2004, vol.104, no.152
Formation of SiCN etch stopper films using organic liquid materials by Hot-wire CVD method
Koshi Oda; Akira Izumi
2004
2004, vol.104, no.152
Emerging Double-Gate MOSFET Technology
Eiichi Suzuki; Yougxun Liu; Meishoku Masahara; Kenichi Ishii
2004
2004, vol.104, no.152
Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSIs - A Study on Selective Etching of SiGe Layers for SBSI Process
Takashi YAMAZAKI; Shun-ichiro OHMI; Shinya MORITA; Hiroyuki OHRI; Junichi MUROTA; Masao SAKURABA; Hiroo OMI; Tetsushi SAKAI
2004
2004, vol.104, no.152
Low-power InP-based HEMT ICs for Communication at 40 Gb/s and Beyond
Yasuhiro Nakasha; Toshihide Suzuki; Yoichi Kawano; Tsuyoshi Takahashi; Kozo Makiyama; Tatsuya Hirose; Masahiko Takikawa
2004
2004, vol.104, no.152
Epitaxial Growth of SiGe Films Grown by Ion-Beam Sputtering and Generation of Large Thermoelectric Power
Kimihiro SASAKI; Masahiro KITAI; Hiroyuki WATASE
2004
2004, vol.104, no.152
TFT Performance Requirements for AMOLEDs towards HDTV Applications
Oh-Kyong Kwon
2004
2004, vol.104, no.152
A 1.25V 2.4GHz Low Power 32/33 Dual-Modulus Prescaler in 0.25μm CMOS Process
Won-Seok Oh; June-Jae Yoo; Seung-Eun Lee; Yong-Mu Jeong; Jong-Chan Choi
2004
2004, vol.104, no.152
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