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期刊

ISSN	0741-3106
刊名	IEEE Electron Device Letters
参考译名	IEEE电子器件快报
收藏年代	1998～2007

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2004	2005	2006	2007

2005, vol.26, no.1	2005, vol.26, no.10	2005, vol.26, no.11	2005, vol.26, no.12	2005, vol.26, no.2	2005, vol.26, no.3
2005, vol.26, no.4	2005, vol.26, no.5	2005, vol.26, no.6	2005, vol.26, no.7	2005, vol.26, no.8	2005, vol.26, no.9
2005, vol.26, no.9 2

题名

作者

出版年

年卷期

Reduction of Leakage Current in Metal-Induced Lateral Crystallization Poly silicon TFTs With Dual-Gate and Multiple Nanowire Channels

Yung-Chun Wu; Ting-Chang Chang; Po-Tsun Liu; Cheng-Wei Chou; Yuan-Chun Wu; Chun-Hao Tu; Chun-Yen Chang

2005

2005, vol.26, no.9 2

psub Guard Ring Design and Modeling for the Purpose of Substrate Noise Isolation in the SOC Era

Tsun-Lai Hsu; Yu-Chia Chen; Hua-Chou Tseng; Victor Liang; Jin Shyong Jan

2005

2005, vol.26, no.9

Highly Scalable Saddle MOSFET for High-Density and High-Performance DRAM

Ki-Heung Park; Kyoung-Rok Han; Jong-Ho Lee

2005

2005, vol.26, no.9

A New Oxide Trap-Assisted NBTI Degradation Model

Neeraj K. Jha; V. Ramgopal Rao

2005

2005, vol.26, no.9

Evidence of Reduced Self-Heating in Strained Si MOSFETs

Gareth Nicholas; Tim J. Grasby; Evan H. C. Parker; Terry E. Whall; Thomas Skotnicki

2005

2005, vol.26, no.9

Gate-Assisted High-Q-Factor Junction Varactor

J.-H. Gau; R.-T. Wu; Steven Sang; C.-H. Kuo; T.-L. Chang; H.-H. Chen; Anchor Chen; Joe Ko

2005

2005, vol.26, no.9

Optimum Crystallographic Alignment for Si n-Channel Ballistic DGFETs

S. E. Laux

2005

2005, vol.26, no.9

Channel Backscattering Characteristics of Uniaxially Strained Nanoscale CMOSFETs

Hong-Nien Lin; Hung-Wei Chen; Chih-Hsin Ko; Chung-Hu Ge; Horng-Chih Lin; Tiao-Yuan Huang; Wen-Chin Lee

2005

2005, vol.26, no.9

Analytic Model for the Post-Breakdown Conductance of Sub-5-nm SiO{sub}2 Gate Oxides

E. Miranda

2005

2005, vol.26, no.9

Performance Evaluation of Field-Enhanced P-Channel Split-Gate Flash Memory

Wen-Ting Chu; Hao-Hsiung Lin; Yu-Hsiimg Wang; Chia-Ta Hsieh; Yung-Tao Lin; Chung S. Wang

2005

2005, vol.26, no.9

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