中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
Analytical Model of High-Frequency Noise Spectrum in Schottky-Barrier DiodesP. Shiktorov; E. Starikov; V. Gruzinskis; L. Reggiani; L. Varani; J. C. Vaissiere20052005, vol.26, no.1
Performance Enhancement by Using the n{sup}+-GaN Cap Layer and Gate Recess Technology on the AlGaN-GaN HEMT FabricationWen-Kai Wang; Po-Chen Lin; Ching-Huao Lin; Cheng-Kuo Lin; Yi-Jen Chan; Guan-Ting Chen; Jen-Inn Chyi20052005, vol.26, no.1
Development of Nuclear Radiation Detectors With Energy Resolution Capability Based on CdTe-n{sup}+-GaAs Heterojunction DiodesMadan Niraula; Kahuzito Yasuda; Kei Uchida; Yutaro Nakanishi; Takashi Mabuchi; Yasunori Agata; Kazuhiko Suzuki20052005, vol.26, no.1
InGaAs-InP DHBTs for Increased Digital IC Bandwidth Having a 391-GHz f{sub}τ and 505-GHz f{sub}(max)Z. Griffith; M. Dahlstrom; M. J. W. Rodwell; X.-M. Fang; D. Lubyshev; Y. Wu; J. M. Fastenau; W. K. Liu20052005, vol.26, no.1
An Abrupt InP-GaInAs-InP DHBTD. Cohen Elias; S. Kraus; A. Gavrilov; S. Cohen; N. Buadana; V. Sidorov; D. Ritter20052005, vol.26, no.1
Write-Once Diode/Antifuse Memory Element with a Sol-Gel Silica Antifuse Cured at Low TemperatureJian Hu; Howard M. Branz; Paul Stradins; Scott Ward; Anna Duda; Qi Wang; Craig Perlov; Warren B. Jackson; Carl Taussig20052005, vol.26, no.1
Effects of Annealing on Charge in HfO{sub}2 Gate StacksZ. Zhang; M. Li; S. A. Campbell20052005, vol.26, no.1
A New Low-Power pMOS Poly-Si Inverter for AMDsSang-Hoon Jung; Woo-Jin Nam; Jae-Hoon Lee; Jae-Hong Jeon; Min-Koo Han20052005, vol.26, no.1
Nanoscale FD/SOI CMOS: Thick or Thin BOX?V. P. Trivedi; J. G. Fossum20052005, vol.26, no.1
RF Power Performance of an LDMOSFET on High-Resistivity SOIJames G. Fiorenza; Jesus A. del Alamo20052005, vol.26, no.1
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