中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



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1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
Device Performance Improvement of InGaP/InGaAs Doped-Channel FETsFeng-Tso Chien; Jin-Mu Yin; Hsien-Chin Chiu; Yi-Jen Chan20052005, vol.26, no.12
InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High-Electron-Mobility Transistor With a Liquid-Phase-Oxidized InGaP as Gate DielectricKuan-Wei Lee; Po-Wen Sze; Yu-Ju Lin; Nan-Ying Yang; Mau-Phon Houng; Yeong-Her Wang20052005, vol.26, no.12
Microplasma Breakdown in High-Concentration III-V Solar CellsJose Ramon Gonzalez; Ignacio Rey-Stolle; Carlos Algora; Beatriz Galiana20052005, vol.26, no.12
Enhanced-Performance of AlGaN-GaN HEMTs Grown on Grooved Sapphire SubstratesZ. H. Feng; S. J. Cai; K. J. Chen; Kei May Lau20052005, vol.26, no.12
High-Power P-i-N Diode With Local Lifetime Control Using Palladium Diffusion Controlled by Radiation DefectsJan Vobecky; Pavel Hazdra20052005, vol.26, no.12
Asymmetric Electric Field Enhancement in Nanocrystal MemoriesChungho Lee; Udayan Ganguly; Venkat Narayanan; Tuo-Hung Hou; Jinsook Kim; Edwin C. Kan20052005, vol.26, no.12
Stoichiometry Dependence of Fermi-Level Pinning in Fully Silicided (FUSI) NiSi Gate on High-K DielectricMoon Sig Joo; Byung Jin Cho; N. Balasubramanian; Dim-Lee Kwong20052005, vol.26, no.12
High-Density MIM Capacitors (～85 nF/cm{sup}2) on Organic SubstratesE. B. Liao; L. H. Guo; R. Kumar; G. Q. Lo; N. Balasubramanian; D. L. Kwong20052005, vol.26, no.12
Monolithic Integration of an Infrared Photon Detector With a MEMS-Based Tunable FilterC. A. Musca; J. Antoszewski; K. J. Winchester; A. J. Keating; T. Nguyen; K. K. M. B. D. Silva; J. M. Dell; L. Faraone; P. Mitra; J. D. Beck; M. R. Skokan; J. E. Robinson20052005, vol.26, no.12
Zero Bias Resonant Tunnel Schottky Contact Diode for Wide-Band Direct DetectionPrem Chahal; Frank Morris; Gary Frazier20052005, vol.26, no.12
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