中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2005, vol.26, no.1 2005, vol.26, no.10 2005, vol.26, no.11 2005, vol.26, no.12 2005, vol.26, no.2 2005, vol.26, no.3
2005, vol.26, no.4 2005, vol.26, no.5 2005, vol.26, no.6 2005, vol.26, no.7 2005, vol.26, no.8 2005, vol.26, no.9
2005, vol.26, no.9 2

题名作者出版年年卷期
AlGaN-GaN HEMTs on Patterned Silicon (111) SubstrateShuo Jia; Yilmaz Dikme; Deliang Wang; Kevin J. Chen; Kei May Lau20052005, vol.26, no.3
A New ESD Protection Structure for High-Speed GaAs RF ICsMaoyou Sun; Yicheng Lu20052005, vol.26, no.3
A Submicrometer 252 GHz f{sub}T and 283 GHz f{sub}(MAX) InP DHBT With Reduced C{sub}(BC) Using Selectively Implanted Buried Subcollector (SIBS)James C. Li; Mary Chen; Donald A. Hitko; Charles H. Fields; Binqiang Shi; Rajesh Rajavel; Peter M. Asbeck; Marko Sokolich20052005, vol.26, no.3
Cat-CVD SiN-Passivated AlGaN-GaN HFETs with Thin and High Al Composition Barrier LayersMasataka Higashiwaki; Nobumitsu Hirose; Toshiaki Matsui20052005, vol.26, no.3
Compact Logic NAND-Gate Based on a Single In-Plane Quantum-Wire TransistorS. Reitzenstein; L. Worschech; C. R. Muller; A. Forchel20052005, vol.26, no.3
Highly Linear Al{sub}(0.3)Ga{sub}(0.7)N-Al{sub}(0.05)Ga{sub}(0.95)N-GaN Composite-Channel HEMTsJie Liu; Yugang Zhou; Rongming Chu; Yong Cai; Kevin J. Chen; Kei May Lau20052005, vol.26, no.3
A Novel Program-Erasable High-κ AlN-Si MIS CapacitorC. H. Lai; B. F. Hung; C. F. Cheng; Won Jong Yoo; M. F. Li; Chunxiang Zhu; S. P. McAlister; Dim-Lee Kwong20052005, vol.26, no.3
Characterization of Nickel Germanide Thin Films for Use as Contacts to p-Channel Germanium MOSFETsJohn Y. Spann; Robert A. Anderson; Trevor J. Thornton; Gari Harris; Shawn G. Thomas; Clarence Tracy20052005, vol.26, no.3
High-Performance Nonvolatile HfO{sub}2 Nanocrystal MemoryYu-Hsien Lin; Chao-Hsin Chien; Ching-Tzung Lin; Chun-Yen Chang; Tan-Fu Lei20052005, vol.26, no.3
Characteristics of HfO{sub}2 pMOSFET Prepared by B{sub}2H{sub}6 Plasma Doping and KrF Excimer Laser AnnealingSungkweon Back; Sungho Heo; Haejung Choi; Hyunsang Hwang20052005, vol.26, no.3
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