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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
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2005
2006
2007
2005, vol.26, no.1
2005, vol.26, no.10
2005, vol.26, no.11
2005, vol.26, no.12
2005, vol.26, no.2
2005, vol.26, no.3
2005, vol.26, no.4
2005, vol.26, no.5
2005, vol.26, no.6
2005, vol.26, no.7
2005, vol.26, no.8
2005, vol.26, no.9
2005, vol.26, no.9 2
题名
作者
出版年
年卷期
On the Electrical SOA of Integrated Vertical DMOS Transistors
P. Moens; K. Reynders
2005
2005, vol.26, no.4
Mobility Enhancement in Local Strain Channel nMOSFETs by Stacked a-Si/Poly-Si Gate and Capping Nitride
Tsung Yi Lu; Tien Sheng Chao
2005
2005, vol.26, no.4
A Novel SOI Lateral-Power MOSFET With a Self-Aligned Drift Region
Lingpeng Guan; Johnny K. O. Sin; Zhibin Xiong; Haitao Liu
2005
2005, vol.26, no.4
100-nm n-/p-Channel I-MOS Using a Novel Self-Aligned Structure
Woo Young Choi; Jong Duk Lee; Young June Park; Byung-Gook Park
2005
2005, vol.26, no.4
VCO Phase-Noise Improvement by Gate-Finger Configuration of 0.13-μm CMOS Transistors
Chien-Chih Ho; Gong-Hao Liang; Chi-Feng Huang; Chih-Sheng; Chih-Ping Chao
2005
2005, vol.26, no.4
On-State Characteristics of SiC Power UMOSFETs on 115-μm Drift Layers
Y. Sui; T. Tsuji; J. A. Cooper, Jr.
2005
2005, vol.26, no.4
Leakage Suppression of Gated Diodes Fabricated Under Low-Temperature Annealing With Substitutional Carbon Si{sub}(1-y)C{sub}y Incorporation
Chung Foong Tan; Eng Fong Chor; Hyeokjae Lee; Jinping Liu; Elgin Quek; Lap Chan
2005
2005, vol.26, no.4
A Novel Self-Aligned Poly-Si TFT With Field-Induced Drain Formed by the Damascene Process
Joon-ha Park; Ohyun Kim
2005
2005, vol.26, no.4
Base Resistance Scaling for SiGeC HBTs With a Fully Nickel-Silicided Extrinsic Base
B. Gunnar Malm; Erik Haralson; Erdal Suvar; Henry H. Radamson; Yong-Bin Wang; Mikael Ostling
2005
2005, vol.26, no.4
High-Mobility Strained SiGe-on-Insulator pMOSFETs With Ge-Rich Surface Channels Fabricated by Local Condensation Technique
Tsutomu Tezuka; Shu Nakaharai; Yoshihiko Moriyama; Naoharu Sugiyama; Shin-ichi Takagi
2005
2005, vol.26, no.4
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