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期刊
ISSN
0741-3106
刊名
IEEE Electron Device Letters
参考译名
IEEE电子器件快报
收藏年代
1998~2007
全部
1998
1999
2000
2001
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2005
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2007
2007, vol.28, no.1
2007, vol.28, no.10
2007, vol.28, no.11
2007, vol.28, no.12
2007, vol.28, no.2
2007, vol.28, no.3
2007, vol.28, no.4
2007, vol.28, no.5
2007, vol.28, no.6
2007, vol.28, no.7
2007, vol.28, no.8
2007, vol.28, no.9
题名
作者
出版年
年卷期
RF-Enhanced Contacts to Wide-Bandgap Devices
G. Simin; Z.-J. Yang
2007
2007, vol.28, no.1
Power Stability of AlGaN/GaN HFETs at 20 W/mm in the Pinched-Off Operation Mode
A. Koudymov; C. X. Wang; V. Adivarahan; J. Yang; G. Simin; M. Asif Khan
2007
2007, vol.28, no.1
DC Characteristics of AlGaAs/GaAs/GaN HBTs Formed by Direct Wafer Fusion
Chuanxin Lian; Huili (Grace) Xing; Chad S. Wang; Lee McCarthy; Dave Brown
2007
2007, vol.28, no.1
Impacts of Dopant Segregation on the Performance and Interface-State Density of the MOSFET With FUSI NiSi Gate
J. Liu; D. L. Kwong
2007
2007, vol.28, no.1
Resistive Switching Mechanism in Zn{sub}xCd{sub}(1-x)S Nonvolatile Memory Devices
Zheng Wang; Peter B. Griffin; Jim McVittie; Simon Wong; Paul C. McIntyre; Yoshio Nishi
2007
2007, vol.28, no.1
High-Performance Metal-Insulator-Metal Capacitors Using Amorphous BaSm{sub}2Ti{sub}4O{sub}12 Thin Film
Young Hun Jeong; Jong Bong Lim; Sahn Nahm; Ho-Jung Sun; Hwack Joo Lee
2007
2007, vol.28, no.1
Effect of F{sub}2 Postmetallization Annealing on the Electrical and Reliability Characteristics of HfSiO Gate Dielectric
Man Chang; Minseok Jo; Hokyung Park; Hyunsang Hwang; Byoung Hun Lee; Rino Choi
2007
2007, vol.28, no.1
High-κ Al{sub}2O{sub}3-HfTiO Nanolaminates With Less Than 0.8-nm Equivalent Oxide Thickness
V. Mikhelashvili; G. Eisenstein
2007
2007, vol.28, no.1
High-Quality Factor Electrolyte Insulator Silicon Capacitor for Wireless Chemical Sensing
J. Garcia-Canton; A. Merlos; A. Baldi
2007
2007, vol.28, no.1
Robust Coupled-Quantum-Well Structure for Use in Electrorefraction Modulators
Sasa Ristic; Nicolas A. F. Jaeger
2007
2007, vol.28, no.1
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