中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
Low-Frequency Noise Assessment of Silicon Passivated Ge pMOSFETs With TiN/TaN/HfO{sub}2 Gate StackW. Guo; G. Nicholas; B. Kaczer; R. M. Todi; B. De Jaeger; C. Claeys; A. Mercha; E. Simoen; B. Cretu; J.-M. Routoure; R. Carin20072007, vol.28, no.4
High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function Ir{sub}3Si GateC. H. Wu; B. F. Hung; Albert Chin; S. J. Wang; X. P. Wang; M.-F. Li; C. Zhu; F. Y. Yen; Y. T. Hou; Y Jin; H. J. Tao; S. C. Chen; M. S. Liang20072007, vol.28, no.4
Impact of High-k Gate Dielectrics on the Device and Circuit Performance of Nanoscale FinFETsC. R. Manoj; V. Ramgopal Rao20072007, vol.28, no.4
Effects of Measurement Temperature on NBTIJ. F. Zhang; M. H. Chang; G. Groeseneken20072007, vol.28, no.4
Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress LinerKan-Wee Ang; King-Jien Chui; Chin-Hang Tung; N. Balasubramanian; Ming-Fu Li; Ganesh S. Samudra; Yee-Chia Yeo20072007, vol.28, no.4
Performance Implications of Inductive Effects for Carbon-Nanotube Bundle InterconnectArthur Nieuwoudt; Yehia Massoud20072007, vol.28, no.4
A Quantum-Mechanical View on the Capacitance of a Silicon p-n JunctionG. A. M. Hurkx; P. Agarwal20072007, vol.28, no.4
Improved Ge Surface Passivation With Ultrathin SiO{sub}x Enabling High-Mobility Surface Channel pMOSFETs Featuring a HfSiO/WN Gate StackSachin Joshi; Cristiano Krug; Dawei Heh; Hoon Joo Na; Harlan R. Harris; Jung Woo Oh; Paul D. Kirsch; Prashant Majhi; Byoung Hun Lee; Hsing-Huang Tseng; Raj Jammy; Jack C. Lee; Sanjay K. Banerjee20072007, vol.28, no.4
Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nmLeonardo Gomez; I. Aberg; J. L. Hoyt20072007, vol.28, no.4
A Graphene Field-Effect DeviceMax C. Lemme; Tim J. Echtermeyer; Matthias Baus; Heinrich Kurz20072007, vol.28, no.4
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