中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0741-3106
刊名IEEE Electron Device Letters
参考译名IEEE电子器件快报
收藏年代1998～2007



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007

2007, vol.28, no.1 2007, vol.28, no.10 2007, vol.28, no.11 2007, vol.28, no.12 2007, vol.28, no.2 2007, vol.28, no.3
2007, vol.28, no.4 2007, vol.28, no.5 2007, vol.28, no.6 2007, vol.28, no.7 2007, vol.28, no.8 2007, vol.28, no.9

题名作者出版年年卷期
High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated CircuitsYong Cai; Zhiqun Cheng; Zhenchuan Yang; Chak Wan Tang; Kei May Lau; Kevin J. Chen20072007, vol.28, no.5
Compact Model of Current Collapse in Heterostructure Field-Effect TransistorsA. Koudymov; M. S. Shur; G. Simin20072007, vol.28, no.5
Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave DetectorsN. Su; Z. Zhang; J. N. Schulman; P. Fay20072007, vol.28, no.5
A 0.2-W Heterostructure Barrier Varactor Frequency Tripler at 113 GHzJosip Vukusic; Tomas Bryllert; T. Arezoo Emadi; Mahdad Sadeghi; Jan Stake20072007, vol.28, no.5
A New Method for Identification and Minimization of Distortion Sources in GaN HEMT Devices Based on Volterra Series AnalysisE. R. Srinidhi; A. Jarndal; G. Kompa20072007, vol.28, no.5
Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection DiodesShin-Chang Shei; Jinn-Kong Sheu; Chien-Fu Shen20072007, vol.28, no.5
Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack EffectH. F. Sun; Andreas R. Alt; C. R. Bolognesi20072007, vol.28, no.5
RF Power Measurements of InAlN/GaN Unstrained HEMTs on SiC Substrates at 10 GHzG. H. Jessen; J. K. Gillespie; G. D. Via; A. Crespo; D. Langley; M. E. Aumer; C. S. Ward; H. G. Henry; D. B. Thomson; D. P. Partlow20072007, vol.28, no.5
Direct Monitoring of RF Overstress in High-Power Transistors and AmplifiersA. Stopel; A. Khramtsov; S. Solodky; A. Fainbrun; Yoram Shapira20072007, vol.28, no.5
Threshold Voltage Shift Due to Mechanical Stress-Enhanced Plasma Process-Induced Damage in 0.13-μm pMOSFETRui Li; Wei-Ran Kong; Kai Tao; Liu-Jiang Yu; Kevin Huang; Jiang Ning; Chun-Qi Geng; Ching-Dong Wang20072007, vol.28, no.5
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