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期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


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2008, vol.108, no.121 2008, vol.108, no.177 2008, vol.108, no.262 2008, vol.108, no.321 2008, vol.108, no.34 2008, vol.108, no.369
2008, vol.108, no.87

题名作者出版年年卷期
III-V Semiconductor Epitaxial Nanowires and Their ApplicationsTakashi FUKUI; Shinjiro HARA; Kenji HIRUMA; Junichi MOTOHISA20082008, vol.108, no.121
Narrow-gap III-V semiconductor technology: lattice-mismatched growth and epitaxial lift-off for heterogeneous integrationToshi-kazu SUZUKI20082008, vol.108, no.121
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap LayerTadayoshi Deguchi; Takashi Egawa20082008, vol.108, no.121
Properties of GaN MIS capacitors using Al{sub}2O{sub}3 as gate dielectric deposited by Remote Plasma Atomic Layer DepositionHyeong-Seon Yun; Ka-Lam Kim; No-Won Kwak; Woo-Seok Lee; Sang-Hyun Jeong; Ju-Ok Seo; Kwang-Ho Kim20082008, vol.108, no.121
Guidelines for the threshold voltage control of metal/HfSiON systemAkira Nishiyama; Yoshinori Tsuchiya; Masahiko Yoshiki; Atsuhiro Kinoshita; Junji Koga; Masato Koyama20082008, vol.108, no.121
Precise Ion Implantation for Advanced MOS LSIsToshiharu Suzuki20082008, vol.108, no.121
Quantum Modeling of Carrier Transport through Silicon Nano-devicesNobuya MORI; Hideki MINARI20082008, vol.108, no.121
High-K Dielectrics for Charge Trap - type Flash Memory ApplicationByung Jin Cho; Wei He; Jing Pu20082008, vol.108, no.121
Characteristics of Locally-Separated Channel FinFETs with Non-Overlapped Source/Drain to Gate for Sub-50 nm DRAM Cell TransistorsHan-A-Reum Jung; Ki-Heung Park; Hyuck-In Kwon; Jong-Ho Lee20082008, vol.108, no.121
A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power PropagationHiroshi Imai; Masahiko Sugimura; Masafumi Kawasaki; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi20082008, vol.108, no.121
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