中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：电子装置
收藏年代2000～2024

关联期刊参考译名收藏年代
電子情報通信学会技術研究報告电子信息通信学会技术研究报告：电子装置 


全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2009, vol.109, no.157 2009, vol.109, no.16 2009, vol.109, no.23 2009, vol.109, no.230 2009, vol.109, no.288 2009, vol.109, no.313
2009, vol.109, no.360 2009, vol.109, no.422 2009, vol.109, no.81 2009, vol.109, no.97

题名作者出版年年卷期
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant BumpLi Jing Qiu; Naoya Watanabe; Tanemasa Asano20092009, vol.109, no.97
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensorJin Kwan Kim; Keedong Yang; Yong Soo Lee; Hee Chul Lee20092009, vol.109, no.97
A New Combination of RSD and Inside Spacer Thin Film TransistorM. J. Chang; T. C. Li; F. T. Chien; C. N. Liao; Y. T. Tsai20092009, vol.109, no.97
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling BarrierJoung-eob Lee; Kwon-Chil Kang; Jung Han Lee; Byung-Gook Park20092009, vol.109, no.97
Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped LayerD. S. Lee; H.-S. Yang; K. C. Kang; J.-E. Lee; J. H. Lee; B.-G Park20092009, vol.109, no.97
InAlN barrier layer for GaN-based FET InAlN/AlGaN/GaN heterostructures with high electron mobility and flat surfaceMasanobu HIROKI; Narihiko MAEDA; Takashi KOBAYASHI; Naoteru Shigekawa20092009, vol.109, no.97
A New Bottom-Gated Polysilicon Thin Film Transistors with Polysilicon spacerY. J. Chen; T. C. Li; F. T. Chien; C. N. Liao; Y. T. Tsai20092009, vol.109, no.97
InP Gunn diodes with shallow-barrier Schottky contactsM. R. Kim; J. K. Rhee; S. D. Lee; Y. S. Chae; S. K. Sharma; A. Kathalingam; C. W. Lee; H. J. Lim; J. H. Choi; W. J. Kim20092009, vol.109, no.97
Formation and application of InP porous structures on p-n substratesTaketomo SATO; Naoki YOSHIZAWA; Hiroyuki OKAZAKI; Tamotsu HASHIZUME20092009, vol.109, no.97
Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer depositionKimihito Ooyama; Chihoko Mizue; Yujin Hori; Tamotsu Hashizume20092009, vol.109, no.97
12345678910...



国家科技图书文献中心  全球文献资源网  京ICP备05055788号-26  京公网安备11010202008970号  机械工业信息研究院 2018-2024