中国机械工程学会生产工程分会知识服务平台

期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002~2023



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2002 2003 2004 2005 2006 2007
2008 2009 2010 2011 2012 2013
2014 2015 2016 2017 2018 2019
2020 2021 2022 2023

2002, vol.31, no.1 2002, vol.31, no.2 2002, vol.31, no.3 2002, vol.31, no.4 2002, vol.31, no.5 2002, vol.31, no.6

题名作者出版年年卷期
X-ray-induced irreversible changes in the structure and electrical properties of Cd{sub}(1-x)Zn{sub}x TeE. M. Pashaev; V. N. Peregudov; S. N. Yakunin; A. A. Zaitsev; T. G. Kolesnikova; A. P. Korovin20022002, vol.31, no.5
Diffusion of nitrogen atoms implanted into synthetic diamondsE. I. Cherepov; E. G. Tishkovskii; V. I. Obodnikov; Yu. N. Pal'yanov; A. G. Sokol20022002, vol.31, no.5
Polycrystalline-silicon LPCVD by propene-assisted silane pyrolysis: a study of the process and the filmsV. G. Erkov; S. F. Devyatova20022002, vol.31, no.5
Isotropic plasma etching of SiO{sub}2 filmsA. A. Kovalevskii; V. S. Malyshev; V. V. Tsybul'skii; V. M. Sorokin20022002, vol.31, no.5
Annealing of radiation and electrostatic-discharge damages in semiconductor devicesM. I. Gorlov; D. A. Litvinenko20022002, vol.31, no.5
Si{sub}3N{sub}4 SOI structures produced by nitrogen ion implantation at high energies and beam current densitiesF. F. Komarov; A. F. Komarov; S. A. Petrov20022002, vol.31, no.5
Characterization of selectively doped InAs-quantum-dot GaAs-based multilayer heterostructures by high-resolution X-ray diffractionE. M. Pashaev; S. N. Yakunin; A. A. Zaitsev; V. G. Mokerov; Yu. V. Fedorov; R. M. Imamov20022002, vol.31, no.5
MOS-controlled thyristor: a study of a promising power-switching deviceE. V. Chernyavskii; V. P. Popov; Yu. S. Pakhmutov; L. N. Safronov20022002, vol.31, no.5
Trench-gate MOS-controlled thyristor: an evaluationE. V. Chernyavskii; V. P. Popov; Yu. S. Pakhmutov; L. N. Safronov20022002, vol.31, no.5
Effect of discontinuities on ULSI on-chip interconnection characteristicsV. A. Goryachev20022002, vol.31, no.5
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