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期刊


ISSN1063-7397
刊名Russian Microelectronics
参考译名俄罗斯微电子学
收藏年代2002～2023



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2022, vol.51, no.1 2022, vol.51, no.2 2022, vol.51, no.3 2022, vol.51, no.4 2022, vol.51, no.5 2022, vol.51, no.6
2022, vol.51, no.7 2022, vol.51, no.8

题名作者出版年年卷期
Influence of Anisotropy of Isoenergetic Surface on Electrical Conductivity and the Hall Constant for a Thin Semiconductor FilmKuznetsov P. A.; Moskovsky S. B.; Romanov D. N.20222022, vol.51, no.3
Structuring Silicon in a High-Frequency Discharge of Freon R-23Dunaev A. V.; Murin D. B.20222022, vol.51, no.3
A High Voltage CMOS Voltage Level Converter for a Low Voltage ProcessShubin V. V.20222022, vol.51, no.3
Monolithic Integrated Circuits Based on Gallium Nitride for Short-Range Radar and Communications in the 22–25 GHz Frequency RangeMatveenko O. S.; Gnatyuk D. L.; Bugaev A. S.; Pavlov A. Yu.; Gamkrelidze S. A.; Galiev R. R.; Zuev A. V.; Fedorov Yu. V.; Lavrukhin D. V.; Mikhalev A. O.; Zenchenko N. K.20222022, vol.51, no.3
Nanosized Modification of the Silicon Surface by the Method of Focused Ion BeamsKots I. N.; Polyakova V. V.; Morozova Yu. V.; Kolomiytsev A. S.; Klimin V. S.; Ageev O. A.20222022, vol.51, no.3
Charge Collection by CMOS Transistors from Tracks of Single Particles Passing through Layer of Shallow Trench IsolationStenin V. Ya.; Katunin Yu. V.20222022, vol.51, no.3
Electrophysical Parameters and Emission Spectra of a DC Glow Discharge in the Freon R-23 MediumMurin D. B.; Pivovarenok S. A.; Malyugin A. A.; Bobylev A. V.20222022, vol.51, no.3
Technology for Producing Schottky Contacts Based on an IrSi–Si CompositeAliev Kh. S.; Kerimov E. A.20222022, vol.51, no.3
Effect of Discharge Power in a Plasma during Reactive-Ion Etching of Massive Substrates on the Matching of the Lower Electrode with a High-Frequency Bias GeneratorPoletayev S. D.20222022, vol.51, no.3
The Analysis of the Polysilicon base Position of the Thermal Resistance and the Self Heating Effects of 0.13 μm SiGe Heterojunction Bipolar TransistorsAbdelaaziz Boulgheb; Lakhdara Maya; Latreche Saida20222022, vol.51, no.3
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