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期刊
ISSN
0097-966X
刊名
SID International Symposium
参考译名
信息显示学会国际会议技术论文辑要
收藏年代
2005~2022
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2016, vol.47, no.1
2016, vol.47, no.2
2016, vol.47, no.3
题名
作者
出版年
年卷期
Oxide TFT with Split Source Drain Electrodes for Highly Flexible Display
Suhui Lee; Mallory Mativenga; Jin Jang
2016
2016, vol.47, no.3
Novel High Mobility Oxide TFT with Self-Aligned S/D Regions Formed by Wet-etch process
Kwang Hwan Ji; Jiyong Noh; Pil Sang Yun; Jong Uk Bae; Kwon-Shik Park; InByeong Kang
2016
2016, vol.47, no.3
Electrical Characteristics of Dual-Gate CAAC-IGZO FET with Self-Aligned Top Gate
Ryunosuke Honda; Akio Suzuki; Shinpei Matsuda; Satoru Saito; Yukinori Shima; Junichi Koezuka; Shunpei Yamazaki
2016
2016, vol.47, no.3
A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide
Sung Pyo Park; Hong Jae Kim; Young Jun Tak; Seonghwan Hong; Hee Jun Kim; Jong Sun Choi; Hyun Jae Kim
2016
2016, vol.47, no.3
Aqueous Precursor Based Solution-Processed Metal Oxide Semiconductor
Huajun Chen; You Seung Rim; Sang-Hoon Bae; Yang Yang
2016
2016, vol.47, no.3
High Performance LTPS Thin-film Transistors using Low Cost Polycrystalline Silicon by Blue Laser Annealing
Seonghyun Jin; Mallory Mativenga; Jin Jang
2016
2016, vol.47, no.3
Corbino Oxide TFTs for Flexible AMOLED Display Stability
Mallory Mativenga; Younwoo Choe; Jaegwang Um; Jin Jang
2016
2016, vol.47, no.3
High Performance Back Channel Etch Metal Oxide Thin-film Transistor with Double Active Layers
Jong-Heon Yang; Ji Hun Choi; Jae-Eun Pi; Hee-Ok Kim; Eun-Suk Park; Oh-Sang Kwon; Sooji Nam; Sung Haeng Cho; Seunghyup Yoo; Chi-Sun Hwang
2016
2016, vol.47, no.3
Excellent Mechanical Bending Stability of Flexible a-IGZO TFT by Dual Gate Dual Sweep Using TCAD Simulation
Mohammad Masum Billah; Mehedi Hasan; Delwar Hossain Chowdhury; Jin Jang
2016
2016, vol.47, no.3
Development of IGZO ESL Type TFTs at G8.5 for 55" AMOLED TVs
Dongfang Wang; Guangcai Yuan; Ce Zhao; Bin Zhou; Guanghui Liu; Luke Ding; Ming Wang; Jun Cheng; Jun Liu
2016
2016, vol.47, no.3
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