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期刊


ISSN1438-1656
刊名Advanced Engineering Materials
参考译名先进的工程材料
收藏年代1999～2023



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2023

2009, vol.11, no.10 2009, vol.11, no.11 2009, vol.11, no.12 2009, vol.11, no.1-2 2009, vol.11, no.3 2009, vol.11, no.4
2009, vol.11, no.5 2009, vol.11, no.6 2009, vol.11, no.7 2009, vol.11, no.8 2009, vol.11, no.9

题名作者出版年年卷期
Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory ApplicationsJaakko Niinisto; Kaupo Kukli; Mikko Heikkila; Mikko Ritala; Markku Leskela20092009, vol.11, no.4
Nonvolatile Memory Concepts Based on Resistive Switching in Inorganic MaterialsThomas Mikolajick; Martin Salinga; Michael Kund; Thorsten Kever20092009, vol.11, no.4
New Materials in Memory Development Sub 50 nm: Trends in Flash and DRAMKarl Heinz Kuesters; Marc Florian Beug; Uwe Schroeder; Nicolas Nagel; Ulrike Bewersdorff; Gerald Dallmann; Stefan Jakschik; Roman Knoefler; Stephan Kudelka; Christoph Ludwig; Dirk Manger; Wolfgang Mueller; Armin Tilke20092009, vol.11, no.4
Dislocations as Active Components in Novel Silicon DevicesMartin Kittler; Manfred Reiche20092009, vol.11, no.4
Perovskite BaHfO{sub}3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor ApplicationsGrzegorz Lupina; Jarek Dabrowski; Piotr Dudek; Grzegorz Kozlowski; Mindaugas Lukosius; Christian Wenger; Hans-Joachim Mussig20092009, vol.11, no.4
In-Situ Studies of ALD Growth of Hafnium Oxide FilmsKonstantin Karavaev; Krzysztof Kolanek; Massimo Tallarida; Dieter Schmeisser; Ehrenfried Zschech20092009, vol.11, no.4
Interface Reactions in Ultrathin Functional Dielectric FilmsDieter Schmeisser; Karsten Henkel; Klaus Muller; Massimo Tallarida20092009, vol.11, no.4
The Role of Strain in New Semiconductor DevicesAlex Dommann; Antonia Neels20092009, vol.11, no.4
C{sub}60 Nanostructures for Applications in Information TechnologyOliver Senftleben; Tanja Stimpel-Lindner; Peter Iskra; Jgnaz Eisele; Hermann Baumgartner20092009, vol.11, no.4
Energy Level Alignment and Interactions at Potential Contacts for Spin Injection into Organic SemiconductorsMandy Grobosch; Katrin Dorr; Ramesh B. Gangineni; Martin Knupfer20092009, vol.11, no.4
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