中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0385-4221
刊名電気学会論文誌
参考译名电气学会论文集:C电子学、信息工程、系统部分
收藏年代1998～2023



全部

1998 1999 2000 2001 2002 2003
2004 2005 2006 2007 2008 2009
2010 2011 2012 2013 2014 2015
2016 2017 2018 2019 2020 2021
2022 2023

2001, vol.121-C, no.1 2001, vol.121-C, no.10 2001, vol.121-C, no.11 2001, vol.121-C, no.12 2001, vol.121-C, no.2 2001, vol.121-C, no.3
2001, vol.121-C, no.4 2001, vol.121-C, no.5 2001, vol.121-C, no.6 2001, vol.121-C, no.7 2001, vol.121-C, no.8 2001, vol.121-C, no.9

题名作者出版年年卷期
SOI technology originated in Japan: for the special issue of the "supermicrostructure integrated devices and process technologies"Yasuo Tarui20012001, vol.121-C, no.3
Current progress in SOI wafer technologyKatsutoshi Izumi20012001, vol.121-C, no.3
Issue of SOI MOS transistor and its improvementYasuo Yamaguchi; Takashi Ipposhi; Shigeto Maegawa20012001, vol.121-C, no.3
VLSI design and education center: the national center that supports education and research on VLSI designKoichiro Hoh; Kunihiro Asada; Makoto Ikeda20012001, vol.121-C, no.3
Degradation of direct-tunneling gate oxide under hot hole injectionKamakura Yoshinari; Deguchi Kazuaki; Ishida Akihiro; Uno Shigeyasu; Taniguchi Kenji20012001, vol.121-C, no.3
Metal-gate, Schottky-source/drain SOI-MOSFET for complementary integrationKen Matsuura; Tetsuya Fukuoka; Ryo Tanabe; Minoru Fujishima; Koichiro Hoh20012001, vol.121-C, no.3
Stress induced electromigration failure in ULSI interconnectsKazuhiro Hoshino20012001, vol.121-C, no.3
Evaluation of Si nanowires through device characteristics and improvement in uniformity of Si nanowire width using self-limiting oxidationToshiyuki Tsutsumi; Eiichi Suzuki; Kenichi Ishii; Seigo Kanemaru; Hiroshi Hiroshima; Kazutaka Tomizawa20012001, vol.121-C, no.3
A new substrate engineering for the formation of empty space in silicon (ESS) induced by silicon surface migrationTsutomu Sato; Ichiro Mizushima; Yoshitaka Tsunashima20012001, vol.121-C, no.3
Synthesis and analysis of a discrete-time CNN using 1-dimensional cell circuits with S stable points (S=2.3.4,....)Kei Eguchi; Yasukazu Seiki; Toru Tabata; Hongbing Zhu; Fumio Ueno; Takahiro Inoue20012001, vol.121-C, no.3
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