中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2014, vol.114, no.1 2014, vol.114, no.10 2014, vol.114, no.100 2014, vol.114, no.102 2014, vol.114, no.11 2014, vol.114, no.111
2014, vol.114, no.112 2014, vol.114, no.113 2014, vol.114, no.115 2014, vol.114, no.120 2014, vol.114, no.122 2014, vol.114, no.123
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2014, vol.114, no.97 2014, vol.114, no.98

题名作者出版年年卷期
Si面4H-SiC n-MOSFETにおけるSplit C-V特性の周波数依存性結城広登; 矢野裕司20142014, vol.114, no.360
シングルパルスI_d-V_(gs)測定による4H-SiC MOSFETの界面特性評価磯野弘典; 矢野裕司20142014, vol.114, no.360
4H-SiC BJTの電流増幅率の温度依存性浅田聡志; 奥田貴史; 木本恒暢; 須田淳20142014, vol.114, no.360
水蒸気を用いたプラズマ誘起原子層堆積法によるAl_2O_3膜の形成梅原智明; 堀田昌宏; 吉嗣晃治; 石河泰明; 浦岡行治20142014, vol.114, no.360
二元系遷移金属酸化物メモリにおける抵抗変化ドライビングフォースの検討小石遼介; 森山拓洋; 木村康平; 河野公紀; 宮下英俊; 李相錫; 岸田悟; 木下健太郎20142014, vol.114, no.360
NiOを用いたReRAMのセミフォーミング後における抵抗スイッチング特性篠倉弘樹; 西佑介; 岩田達哉; 木本恒暢20142014, vol.114, no.360
B~+およびB_(10)H_(14)~+注入Si基板の軟X線照射による活性化部家彰; 草壁史; 平野翔大; 松尾直人; 神田一浩20142014, vol.114, no.360
抵抗変化メモリ(ReRAM)における導電性パス生成機構の検討~第一原理分子動力学法を用いたNiOの様々な面方位の表面状態解析森山拓洋; 山崎隆浩; 大野隆央; 岸田悟; 木下健太郎20142014, vol.114, no.360
長方形断面Geナノワイヤの正孔移動度の断面形状およびサイズ依存性田中一; 森誠悟; 森岡直也; 須田淳; 木本恒暢20142014, vol.114, no.360
DNAメモリトランジスタの電荷保持機構と伝導機構中村昇平; 松尾直人; 部家彰; 山名一成; 高田忠雄; 福山正隆; 横山新20142014, vol.114, no.360
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