中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2023



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2009, vol.109, no.100 2009, vol.109, no.107 2009, vol.109, no.109 2009, vol.109, no.110 2009, vol.109, no.111 2009, vol.109, no.113
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2009, vol.109, no.98

题名作者出版年年卷期
Design and Simulation of Self-Aligned Vertical Island Single Electron Transistor (VI-SET) with Electrical Tunneling BarrierJoung-eob Lee; Kwon-Chil Kang; Jung Han Lee; Byung-Gook Park20092009, vol.109, no.98
Simulation and Experiment of Liquid-Phase Microjoining Using Cone-Shaped Compliant BumpLi Jing Qiu; Naoya Watanabe; Tanemasa Asano20092009, vol.109, no.98
Design of 30nm FinFET with Halo StructureTetsuo Endoh; Koji Sakui; Yukio Yasuda20092009, vol.109, no.98
A New Combination of RSD and Inside Spacer Thin Film TransistorM. J. Chang; T. C. Li; F. T. Chien; C. N. Liao; Y. T. Tsai20092009, vol.109, no.98
Theoretical study on graphene field-effect transistorsEiichi SANO; Taiichi OTSUJI20092009, vol.109, no.98
Electrical characteristics of OFETs with thin gate dielectricY.-U. Song; S. Ohmi; H. Ishiwara20092009, vol.109, no.98
A Study on Lateral Surface Treatment of the CdTe X-ray image-sensorJin Kwan Kim; Keedong Yang; Yong Soo Lee; Hee Chul Lee20092009, vol.109, no.98
4H-SiC Avalanche Photodiodes for 280 nm UV DetectionB.-R. Park; H.-K. Sung; Chun-Hyung Cho; P. M. Sandvik; Ho-Young Cha20092009, vol.109, no.98
Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped LayerD. S. Lee; H.-S. Yang; K. C. Kang; J.-E. Lee; J. H. Lee; B.-G Park20092009, vol.109, no.98
Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer depositionKimihito Ooyama; Chihoko Mizue; Yujin Hori; Tamotsu Hashizume20092009, vol.109, no.98
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