中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2023



全部

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2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

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题名作者出版年年卷期
HfSiO_x/GaN(0001)の化学構造および電子状態分析大田晃生; 牧原克典; 生田目俊秀; 塩﨑宏司; 宮﨑誠一20192019, vol.119, no.96
ホウ素導入を行ったALD-Al_2O_3/GaN-MOSキャパシタにおける界面特性評価出来真斗; 奥出真; 安藤悠人; 渡邉浩崇; 田中敦之; 久志本真希; 新田州吾; 本田善央; 天野浩20192019, vol.119, no.96
超格子GeTe/Sb_2Te_3メモリの第一原理計算による構造変化シミュレーション小川湧太郎; 野原弘晶; 白川裕規; 洗平昌晃; 白石賢二20192019, vol.119, no.96
X線によるナノデバイスおよび格子欠陥の3次元観察: シリコン材料·デバイス研究会表和彦; 伊藤義泰20192019, vol.119, no.96
[依頼講演]光電子ホログラフィー法によるシリコン中に高濃度ドープされた活性および不活性な不純物原子の三次元原子配列構造の観測筒井一生; 松下智裕; 名取鼓太郎; 小川達博; 室隆桂之; 森川良忠; 星井拓也; 角嶋邦之; 若林整; 林好一; 松井文彦; 木下豊彦20192019, vol.119, no.96
電子デバイスから見た2D/3Dナノ計測の必要性臼田宏冶20192019, vol.119, no.96
イオン注入法によるIV族半導体混晶薄膜の歪緩和促進機構について祖父江秀隆; 福田雅大; 柴山茂久; 財満鎭明; 中塚理20192019, vol.119, no.96
熱処理によるAl/Ge(111)上の極薄Ge層形成小林征登; 大田晃生; 黒澤昌志; 洗平昌晃; 田岡紀之; 池田弥央; 牧原克典; 宮崎誠一20192019, vol.119, no.96
NO窒化処理を施したSiO_2/SiC界面近傍の窒素分布評価細井卓治; Kidist Moges; 染谷満; 志村考功; 原田信介; 渡部平司20192019, vol.119, no.96
Ultra-low resistance contact for n-type Ge_(1-x)Sn_x with in-situ Sb heavily doping and nickel stanogermanide formationJihee Jeon; Akihiro Suzuki; Shigehisa Shibayama; Shigeaki Zaima; Osamu Nakatsuka20192019, vol.119, no.96
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