中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2023



全部

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2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

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题名作者出版年年卷期
ZnOのALD成長での平坦薄膜成長条件の調査山本燎; 加納寛人; 中村篤志; 居波渉20192019, vol.119, no.303
ミストCVD法によりc面サファイア基板上に高温下で成長したZnO結晶の発光特性大橋紘誠; 藤原健八; 山本幹大; 原和彦; 酒井優; 光野徹也20192019, vol.119, no.303
化学溶液析出法によって種々のTCOシード層に成長したZnOナノロッドの構造およびフォトルミネッセンス特性濱本昂大; 寺迫智昭; 矢木正和; 古林寛; 山本哲也20192019, vol.119, no.303
化学溶液析出法による極薄GZO薄膜シード層上へのZnOナノロッドの成長と構造及び光学特性寺迫智昭; 濱本昂大; 山田健太; 甲田真一朗; 矢木正和; 古林寛; 山本哲也20192019, vol.119, no.303
電気化学的な処理を用いた酸化亜鉛光触媒の特性改善安部功二; 大竹徳人20192019, vol.119, no.303
β-Ga_2O_3 SBDを利用したRF-DC変換回路における負荷抵抗と電極面積依存性橋川誠; 浦田幸佑; 竹ノ畑拓海; 大石敏之; 大島孝仁20192019, vol.119, no.303
リセス深さによるノーマリオフ型GaN MOSFETsの短チャンネル効果改善加藤大望; 梶原瑛祐; 向井章; 大野浩志; 新留彩; 田島純平; 彦坂年輝; 蔵口雅彦; 布上真也20192019, vol.119, no.303
ICP-RIEによって作製されたGaNトレンチ側壁のダメージ評価山田真嗣; 櫻井秀樹; 長田大和; 中村敏幸; 上村隆一郎; 須田淳; 加地徹20192019, vol.119, no.303
ALDにより成膜したSiO_2/Al_2O_3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMTのデバイス特性評価横井駿一; 古岡啓太; 久保俊晴; 江川孝志20192019, vol.119, no.303
両極性同時成長を用いたGaN-QPM結晶の作製およびSHGに向けた光学特性評価松久快生; 小林佑斗; 石原弘基; 杉浦真子; 杉田篤史; 井上翼; 中野貴之20192019, vol.119, no.303
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