中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2023



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023

2019, vol.119, no.10 2019, vol.119, no.102 2019, vol.119, no.114 2019, vol.119, no.115 2019, vol.119, no.12 2019, vol.119, no.127
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题名作者出版年年卷期
Understanding the interface in 2D layered transistorsKosuke NAGASHIO20192019, vol.119, no.273
[招待講演] 2019 SISPADレビュー鎌倉良成20192019, vol.119, no.273
[招待講演] 強誘電体HfO_2トンネル接合メモリのスケーラビリティに関する検討小林正治; 莫非; 多川友作; 更屋拓哉; 平本俊郎20192019, vol.119, no.273
ビーム実験による原子スケールプロセスにおける表面反応解析唐橋一浩; 伊藤智子; 浜口智志20192019, vol.119, no.273
招待講演:産業応用を目指したコンパクトモデルの開発三浦道子20192019, vol.119, no.273
3Dフラッシュメモリの製造技術を用いた積層型論理回路の設計法: 全加算器の設計法、低消費電力設計法鈴木章矢; 渡辺重佳20192019, vol.119, no.273
[招待講演] 強誘電体電界効果トランジスタの動的挙動のデバイスシミュレーション服部淳一; 池上努; 福田浩一; 太田裕之; 右田真司; 浅井栄大20192019, vol.119, no.273
[招待講演]不純物の離散性に伴った半導体デバイスモデリングの基本的側面II: 半導体ナノ構造におけるランダム不純物佐野伸行20192019, vol.119, no.273
シリコン材料·デバイス研究会(SDM): [招待講演]SiC酸化プロセスの第一原理分子動力学解析大野隆央20192019, vol.119, no.273
[招待講演]トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション渡辺正裕; 執行直之; 星井拓也; 古川和由; 角嶋邦之; 佐藤克己; 末代知子; 更屋拓哉; 高倉俊彦; 伊藤一夫; 福井宗利; 鈴木慎一; 竹内潔; 宗田伊里也; 若林整; 中島昭; 西澤伸一; 筒井一生; 平本俊郎; 大橋弘通; 岩井洋20192019, vol.119, no.273
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