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期刊
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0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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题名
作者
出版年
年卷期
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process
Keisuke Kado; Mutsunori Uenuma; Kyouhei Nabesaka; Kriti Sharma; Haruka Yamazaki; Satpshi Urakawa; Mami Fujii; Yasuaki Ishikawa; Yukiharu Uraoka
2015
2015, vol.115, no.108
[依頼講演]Al_2O_3/Ga_2O_3界面構造とその面方位依存性
上村崇史; キルシナムルティダイワシガマニ; 倉又朗人; 山腰茂伸; 東脇正高
2015
2015, vol.115, no.108
[依頼講演]Al_2O_3/AlGaN/GaN構造の界面電子準位評価
谷田部然治; 橋詰保
2015
2015, vol.115, no.108
3C/4H異種ポリタイプ接合を有するSiC MOSFETに対する検討
野口宗隆; 岩松俊明; 三浦成久; 中田修平; 山川聡
2015
2015, vol.115, no.108
SiC/SiO_2界面における窒素化学状態の結晶面方位依存性
森大輔; 井上慧; 寺西秀明; 広瀬隆之; 瀧川亜樹
2015
2015, vol.115, no.108
[依頼講演]SiO_2/SiCMOS界面の欠陥特性に酸窒化処理が与える影響
竹内和歌奈; 山本建策; 坂下満男; 金村高司; 中塚理; 財満鎮明
2015
2015, vol.115, no.108
光電子分光法による熱酸化SiO_2/4H-SiCの化学結合状態および欠陥準位密度評価
渡辺浩成; 大田晃生; 牧原克典; 宮崎誠一
2015
2015, vol.115, no.108
シリコン熱酸化膜の水素アニール効果に関する第一原理計算
川内伸悟; 白川裕規; 洗平昌晃; 影島博之; 遠藤哲郎; 白石賢二
2015
2015, vol.115, no.108
Tiナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性
加藤祐介; 荒井崇; 大田晃生; 牧原克典; 宮崎誠一
2015
2015, vol.115, no.108
低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用
永富雄太; 田中慎太郎; 長岡裕一; 山本圭介; 王冬; 中島寛
2015
2015, vol.115, no.108
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