中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication processKeisuke Kado; Mutsunori Uenuma; Kyouhei Nabesaka; Kriti Sharma; Haruka Yamazaki; Satpshi Urakawa; Mami Fujii; Yasuaki Ishikawa; Yukiharu Uraoka20152015, vol.115, no.108
[依頼講演]Al_2O_3/Ga_2O_3界面構造とその面方位依存性上村崇史; キルシナムルティダイワシガマニ; 倉又朗人; 山腰茂伸; 東脇正高20152015, vol.115, no.108
[依頼講演]Al_2O_3/AlGaN/GaN構造の界面電子準位評価谷田部然治; 橋詰保20152015, vol.115, no.108
3C/4H異種ポリタイプ接合を有するSiC MOSFETに対する検討野口宗隆; 岩松俊明; 三浦成久; 中田修平; 山川聡20152015, vol.115, no.108
SiC/SiO_2界面における窒素化学状態の結晶面方位依存性森大輔; 井上慧; 寺西秀明; 広瀬隆之; 瀧川亜樹20152015, vol.115, no.108
[依頼講演]SiO_2/SiCMOS界面の欠陥特性に酸窒化処理が与える影響竹内和歌奈; 山本建策; 坂下満男; 金村高司; 中塚理; 財満鎮明20152015, vol.115, no.108
光電子分光法による熱酸化SiO_2/4H-SiCの化学結合状態および欠陥準位密度評価渡辺浩成; 大田晃生; 牧原克典; 宮崎誠一20152015, vol.115, no.108
シリコン熱酸化膜の水素アニール効果に関する第一原理計算川内伸悟; 白川裕規; 洗平昌晃; 影島博之; 遠藤哲郎; 白石賢二20152015, vol.115, no.108
Tiナノドットを埋め込んだSiリッチ酸化膜の抵抗変化特性加藤祐介; 荒井崇; 大田晃生; 牧原克典; 宮崎誠一20152015, vol.115, no.108
低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用永富雄太; 田中慎太郎; 長岡裕一; 山本圭介; 王冬; 中島寛20152015, vol.115, no.108
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