中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告：可靠性
收藏年代2000～2024



全部

2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon InterfaceTetsuya GOTO; Rihito KURODA; Tomoyuki SUWA; Akinobu TERAMOTO; Toshiki OBARA; Daiki KIMOTO; Shigetoshi SUGAWA; Yutaka KAMATA; Yuki KUMAGAI; Katsuhiko SHIBUSAWA20152015, vol.115, no.280
Investigation of stacked HfN gate insulator formed by ECR plasma sputteringNithi Atthi; Shun-ichiro Ohmi20152015, vol.115, no.280
Xe／H_2プラズマを用いたシリコン基板表面の低温平坦化技術諏訪智之; 寺本章伸; 後藤哲也; 平山昌樹; 須川成利; 大見忠弘20152015, vol.115, no.280
イオン注入技術の現状と課題中島良樹; 濱本成顕; 酒井茂樹; 鉄田博20152015, vol.115, no.280
フラッシュメモリとCMOSロジックの近接混載技術による低消費電力·高速FPGA財津光一郎; 辰村光介; 松本麻里; 小田聖翔; 安田心一20152015, vol.115, no.280
マイクロ波励起プラズマによる立体構造体への等方均一注入技術上田博一; ピーター·ベントゼック; 岡正浩; 小林勇気; 杉本靖広; 川上聡20152015, vol.115, no.280
トンネル電流·拡散電流併用MOSFETのデバイスシミュレーション検討古川貴一; 寺本章伸; 黒田理人; 諏訪智之; 橋本圭市; 小尻尚志; 須川成利20152015, vol.115, no.280
酸素ラジカル処理を用いた強誘電体BiFeO_3薄膜の形成技術今泉文伸; 後藤哲也; 寺本章伸; 須川成利20152015, vol.115, no.280
大画面シート型ディスプレイ実現に向けたディスプレイ材料·プロセス技術藤崎好英20152015, vol.115, no.280
HfO_2をゲート絶縁膜に用いたペンタセンOFETのデバイス特性に関する検討前田康貴; 劉野原; 大見俊一郎20152015, vol.115, no.280
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