中国机械工程学会生产工程分会知识服务平台

期刊


ISSN0913-5685
刊名電子情報通信学会技術研究報告
参考译名电子信息通信学会技术研究报告:可靠性
收藏年代2000~2024



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2000 2001 2002 2003 2004 2005
2006 2007 2008 2009 2010 2011
2012 2013 2014 2015 2016 2017
2018 2019 2020 2021 2022 2023
2024

2015, vol.115, no.100 2015, vol.115, no.101 2015, vol.115, no.102 2015, vol.115, no.103 2015, vol.115, no.104 2015, vol.115, no.106
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2015, vol.115, no.88 2015, vol.115, no.9

题名作者出版年年卷期
Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen sourceP. Pungboon PANSILA; Kensaku KANOMATA; Bashir AHMMAD; Shigeru KUBOTA; Fumihiko HIROSE20152015, vol.115, no.331
スマートスタック技術による多接合太陽電池の接合界面評価野中翔一郎; 古川昭雄; 牧田紀久夫; 水野英範; 菅谷武芳; 仁木栄20152015, vol.115, no.331
GaAs/GaAs接合の電気特性に対するアニール効果柴麗; 梁剣波; 重用直輝20152015, vol.115, no.331
表面活性化ボンディング法に依るSi/SiC接合の電気特性林朋宏; 梁剣波; 新井学; 重川直輝20152015, vol.115, no.331
AlN/Sapphire基板を用いたRF加熱式HVPEによるAlN成長安井大貴; 三宅秀人; 平松和政; 岩谷素顕; 赤崎勇; 天野浩20152015, vol.115, no.331
RF窒素プラズマを用いた表面窒化によるα-(AlGa)_2O_3上AlGaN形成に関する検討荒木努; 武馬輝; 増田直; 名西憓之; 織田真也; 人羅俊実20152015, vol.115, no.331
酸性アモノサーマル法合成GaN種結晶上にハイドライド気相エピタキシャル成長させたm面自立GaN基板の電気的·光学的特性小島一信; 塚田悠介; 古川えりか; 斉藤真; 三川豊; 久保秀一; 池田宏隆; 藤戸健史; 上殿明良; 秩父重英20152015, vol.115, no.331
ホール効果測定による低濃度Mgドープp型GaNの正孔キャリア密度および移動度の解析堀田昌宏; 高島信也; 田中亮; 松山秀昭; 上野勝典; 江戸雅晴; 須田淳20152015, vol.115, no.331
ホール効果測定によるホモエピタキシャル成長低Siドープn型GaNの電気的特性評価澤田直暉; 成田哲生; 加地徹; 上杉勉; 堀田昌宏; 須田淳20152015, vol.115, no.331
ホモエピタキシャル成長n型GaNショットキーバリアダイオードの光電流の波長依存性前田拓也; 岡田政也; 山本喜之; 上野昌紀; 堀田昌宏; 須田淳20152015, vol.115, no.331
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