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期刊
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0913-5685
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電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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题名
作者
出版年
年卷期
NiOを用いたReRAMにおけるフォーミング特性の分布
西佑介; 木本恒暢
2015
2015, vol.115, no.363
高い選択比をもつSiN_xエッチングガスを用いたFinFET構造の作製
小尻尚志; 諏訪智之; 橋本圭市; 寺本章伸; 黒田理人; 須川成利
2015
2015, vol.115, no.363
ゲート電圧印加が光電変換効率に及ぼす効果
大木康平; 日下部昂志; 松尾直人; 部家彰
2015
2015, vol.115, no.363
a-Ge膜のFLA結晶化におけるランプ印加電圧依存性
平野翔太; 部家彰; 松尾直人; 河本直哉; 中村祥章; 横森岳彦; 吉岡正樹
2015
2015, vol.115, no.363
RFマグネトロンスパッタリング法によるIn_2O_3薄膜の特性評価
吉岡敏博; 小川淳史; 弓削政博; 松田時宜; 木村睦
2015
2015, vol.115, no.363
ミストCVD法によるGa_xSn_(1-x)O薄膜の特性評価
弓削政博; 小川淳史; 吉岡敏博; 加藤雄太; 松田時宜; 木村睦
2015
2015, vol.115, no.363
IGZOのアニール温度に対するMR効果の変化
宮村祥吾; 志賀春紀; 今西恒太; 符川明日香; 木村睦; 松田時宜
2015
2015, vol.115, no.363
CrSiNの磁気特性測定
志賀春紀; 宮村祥吾; 今西恒太; 符川明日香; 木村睦; 松田時宜; 廣島安
2015
2015, vol.115, no.363
薄膜poly-Geをチャネルに利用したガラス上の自己整合メタルダブルゲート低温poly-Ge TFTの特性
西村勇哉; 原明大
2015
2015, vol.115, no.363
SnO_2/Al_2O_3薄膜の特性評価と薄膜トランジスタの評価
小川淳史; 弓削政博; 吉岡敏博; 松田時宜; 木村睦
2015
2015, vol.115, no.363
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