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期刊
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0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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题名
作者
出版年
年卷期
p-LDMOSFETのホットキャリア耐性を向上させる新構造の検討
酒井敦; 永久克己; 藤井宏基; 森隆弘; 秋山豊; 山口泰男
2017
2017, vol.117, no.290
GaN MOVPE成長のマルチフィジックスシミュレーション
白石賢二; 関口一樹; 長川健大; 白川裕規; 川上賢人; 山本芳裕; 洗平昌晃; 岡本直也; 芳松克則; 寒川義裕; 柿本浩一
2017
2017, vol.117, no.290
[招待講演]SiC中の不純物拡散モデル
植松真司
2017
2017, vol.117, no.290
[招待講演]SiCパワーMOSFETの特性測定とモデル化
佐藤高史; 大石一輝; 廣本正之; 新谷道広
2017
2017, vol.117, no.290
[招待講演]深いトラップを含むGaN MOSキャパシタ容量のシミュレーション
福田浩一; 浅井栄大; 服部淳一; 清水三聡; 橋詰保
2017
2017, vol.117, no.290
[招待講演]SISPAD 2017レビュー(2)
来栖貴史
2017
2017, vol.117, no.290
[招待講演]不純物の離散性に伴った半導体デバイスモデリングの基本的側面-ランダム不純物ばらつきと自己平均化
佐野伸行
2017
2017, vol.117, no.290
[招待講演]極微細トランジスタの量子輸送シミュレーション
森伸也; 美里劫夏南; 岩田潤一; 押山淳
2017
2017, vol.117, no.290
[招待講演]行列指数法によるデバイス過渡シミュレーションの正確な時間刻み指標
熊代成孝; 亀井達也; 廣木彰; 小林和淑
2017
2017, vol.117, no.290
[招待講演]SISPAD 2017レビュー(1)
廣木彰
2017
2017, vol.117, no.290
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