中国机械工程学会生产工程分会知识服务平台 | sc.gmachineinfo.com

期刊

ISSN	0913-5685
刊名	電子情報通信学会技術研究報告
参考译名	电子信息通信学会技术研究报告：可靠性
收藏年代	2000～2024

全部

2000	2001	2002	2003	2004	2005
2006	2007	2008	2009	2010	2011
2012	2013	2014	2015	2016	2017
2018	2019	2020	2021	2022	2023
2024

2017, vol.117, no.10	2017, vol.117, no.101	2017, vol.117, no.102	2017, vol.117, no.104	2017, vol.117, no.111	2017, vol.117, no.120
2017, vol.117, no.121	2017, vol.117, no.125	2017, vol.117, no.138	2017, vol.117, no.14	2017, vol.117, no.140	2017, vol.117, no.141
2017, vol.117, no.142	2017, vol.117, no.143	2017, vol.117, no.144	2017, vol.117, no.145	2017, vol.117, no.147	2017, vol.117, no.148
2017, vol.117, no.149	2017, vol.117, no.155	2017, vol.117, no.16	2017, vol.117, no.161	2017, vol.117, no.166	2017, vol.117, no.167
2017, vol.117, no.17	2017, vol.117, no.170	2017, vol.117, no.171	2017, vol.117, no.177	2017, vol.117, no.18	2017, vol.117, no.188
2017, vol.117, no.190	2017, vol.117, no.191	2017, vol.117, no.192	2017, vol.117, no.193	2017, vol.117, no.194	2017, vol.117, no.195
2017, vol.117, no.202	2017, vol.117, no.203	2017, vol.117, no.208	2017, vol.117, no.216	2017, vol.117, no.218	2017, vol.117, no.223
2017, vol.117, no.224	2017, vol.117, no.225	2017, vol.117, no.226	2017, vol.117, no.227	2017, vol.117, no.229	2017, vol.117, no.23
2017, vol.117, no.235	2017, vol.117, no.244	2017, vol.117, no.245	2017, vol.117, no.25	2017, vol.117, no.251	2017, vol.117, no.253
2017, vol.117, no.254	2017, vol.117, no.255	2017, vol.117, no.259	2017, vol.117, no.260	2017, vol.117, no.264	2017, vol.117, no.265
2017, vol.117, no.268	2017, vol.117, no.27	2017, vol.117, no.270	2017, vol.117, no.272	2017, vol.117, no.273	2017, vol.117, no.275
2017, vol.117, no.276	2017, vol.117, no.285	2017, vol.117, no.29	2017, vol.117, no.290	2017, vol.117, no.291	2017, vol.117, no.292
2017, vol.117, no.30	2017, vol.117, no.300	2017, vol.117, no.302	2017, vol.117, no.311	2017, vol.117, no.312	2017, vol.117, no.327
2017, vol.117, no.328	2017, vol.117, no.332	2017, vol.117, no.333	2017, vol.117, no.337	2017, vol.117, no.339	2017, vol.117, no.34
2017, vol.117, no.341	2017, vol.117, no.342	2017, vol.117, no.343	2017, vol.117, no.344	2017, vol.117, no.347	2017, vol.117, no.349
2017, vol.117, no.35	2017, vol.117, no.355	2017, vol.117, no.356	2017, vol.117, no.358	2017, vol.117, no.36	2017, vol.117, no.366
2017, vol.117, no.369	2017, vol.117, no.37	2017, vol.117, no.373	2017, vol.117, no.375	2017, vol.117, no.377	2017, vol.117, no.39
2017, vol.117, no.394	2017, vol.117, no.398	2017, vol.117, no.399	2017, vol.117, no.400	2017, vol.117, no.406	2017, vol.117, no.407
2017, vol.117, no.408	2017, vol.117, no.409	2017, vol.117, no.41	2017, vol.117, no.413	2017, vol.117, no.415	2017, vol.117, no.420
2017, vol.117, no.427	2017, vol.117, no.428	2017, vol.117, no.429	2017, vol.117, no.430	2017, vol.117, no.431	2017, vol.117, no.435
2017, vol.117, no.437	2017, vol.117, no.438	2017, vol.117, no.441	2017, vol.117, no.448	2017, vol.117, no.454	2017, vol.117, no.455
2017, vol.117, no.461	2017, vol.117, no.462	2017, vol.117, no.463	2017, vol.117, no.467	2017, vol.117, no.470	2017, vol.117, no.478
2017, vol.117, no.482	2017, vol.117, no.483	2017, vol.117, no.487	2017, vol.117, no.488	2017, vol.117, no.492	2017, vol.117, no.494
2017, vol.117, no.497	2017, vol.117, no.498	2017, vol.117, no.499	2017, vol.117, no.502	2017, vol.117, no.503	2017, vol.117, no.505
2017, vol.117, no.509	2017, vol.117, no.515	2017, vol.117, no.519	2017, vol.117, no.59	2017, vol.117, no.60	2017, vol.117, no.61
2017, vol.117, no.62	2017, vol.117, no.66	2017, vol.117, no.7	2017, vol.117, no.70	2017, vol.117, no.81	2017, vol.117, no.9
2017, vol.117, no.90	2017, vol.117, no.91	2017, vol.117, no.92	2017, vol.117, no.96	2017, vol.117, no.97

题名	作者	出版年	年卷期
[Invited Talk] STDP Synapse with Outstanding Stability based on a Novel Insulator-to-2D-Metal Transition FET	Pablo STOLIAR; Alejandro SCHULMAN; Ai KITOH; Akihito SAWA; Isao H. INOUE	2017	2017, vol.117, no.427
Sub-nm EOT Ferroelectric HfO_2 on p~+Ge with Highly Reliable Field Cycling Properties	X. Tian; L. Xu; S. Shibayama; T. Nishimura; T. Yajima; S. Migita; A. Toriumi	2017	2017, vol.117, no.427
[招待講演]16/14nmノード混載フラッシュメモリに向けた狭いVth分布を持つFinFET Split-Gate MONOSアレイの信頼性及びスケーラピリティ	津田是文; 斉藤朋也; 長瀬寛和; 川嶋祥之; 吉冨敦司; 岡西忍; 林倫弘; 丸山卓也; 井上真雄; 村中誠志; 加藤茂樹; 萩原琢也; 齊藤博和; 山口直; 門島勝; 丸山隆弘; 三原竜善; 柳田博史; 園田賢一郎; 山下朋弘; 山口泰男	2017	2017, vol.117, no.427
[招待講演]過渡解析TCADシミュレーションによる強誘電体負性容量FinFETトランジスタの考察	太田裕之; 右田真司; 池上努; 服部淳一; 浅井栄大; 福田浩一; 鳥海明	2017	2017, vol.117, no.427
[招待講演]Type-IIエネルギーバンド構造を有する酸化物半導体/(Si, SiGe, Ge)積層型トンネル電界効果トンジスタの提案と動作実証	加藤公彦; 松井裕章; 田畑仁; 竹中充; 高木信一	2017	2017, vol.117, no.427
[招待講演]V_(TH) Nearingによる3D-NAND型フラッシュメモリの垂直方向の電荷移動抑制技術	溝口恭史; 小滝翔平; 出口慶明; 竹内健	2017	2017, vol.117, no.427