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0913-5685
刊名
電子情報通信学会技術研究報告
参考译名
电子信息通信学会技术研究报告:可靠性
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2017, vol.117, no.10
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题名
作者
出版年
年卷期
A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology
Ryuji Yamashita; Sagar Magia; Tsutomu Higuchi; Kazuhide Yoneya; Toshio Yamamura; Hiroyuki Mizukoshi; Shingo Zaitsu; Minoru Yamashita; Shunichi Toyama; Norihiro Kamae; Juan Lee; Shuo Chen; Jiawei Tao; William Mak; Xiaohua Zhang; Ying Yu; Yuko Utsunomiya; Yosuke Kato; Manabu Sakai; Masahide Matsumoto; Hardwell Chibvongodze; Naoki Ookuma; Hiroki Yabe; Subodh Taigor; Rangarao Samineni; Takuyo Kodama; Yoshihiko Kamata; Yuzuru Namai; Jonathan Huynh; Sung-En Wang; Yankang He; Trung Pham; Vivek Saraf; Akshay Petkar; Mitsuyuki Watanabe; Koichiro Hayashi; Prashant Swarnkar; Hitoshi Miwa; Aditya Pradhan; Sulagna Dey; Debasish Dwibedy; Thushara Xavier; Muralikrishna Balaga; Samiksha Agarwal; Swaroop Kulkami; Zameer Papasaheb; Sahil Deora; Patrick Hong; Meiling Wei; Gopinath Balakrishnan; Takuya Ariki; Kapil Verma; Chang Siau; Yingda Dong; Ching-Huang Lu; Toru Miwa; Farookh Moogat
2017
2017, vol.117, no.9
A 1/2.3in 20Mpixel 3-Layer Stacked CMOS Image Sensor with DRAM
Tsutomu Haruta; Tsutomu Nakajima; Jun Hashizume; Taku Umebayashi; Hiroshi Takahashi; Kazuo Taniguchi; Masami Kuroda; Hiroshi Sumihiro; Koji Enoki; Takatsugu Yamasaki; Katsuya Ikezawa; Atsushi Kitahara; Masao Zen; Masafumi Oyama; Hiroki Koga; Hidenobu Tsugawa; Tomoharu Ogita; Takashi Nagano; Satoshi Takano; Tetsuo Nomoto
2017
2017, vol.117, no.9
[招待講演]9F~2型高密度セルと階層ビット線方式を採用しLPDDR2インターフェースを実装した4GビットSTT-MRAM
土田賢二; Kwangmyoung Rho; Dongkeun Kim; 白井豊; Jihyae Bae; 稲場恒夫; 野呂寛洋; Hyunin Moon; Sungwoong Chung; 須之内一正; Jinwon Park; Kiseon Park; 山本明人; Seoungju Chung; Hyeongon Kim; 親松尚人; Jonghoon Oh
2017
2017, vol.117, no.9
[依頼講演]超低消費エネルギーと高集積性を併せ持っ電圧制御スピントワニクスメモリ-(Ultra-low Energy Consumption High-Density VoCSM)
與田博明; 下村尚治; 大沢裕一; 白鳥聡志; 加藤侑志; 井口智明; 上口裕三; ブヤンダライアルタンサガイ; 斉藤好昭; 鴻井克彦; 杉山英行; 及川壮一; 清水真理子; 石川瑞恵; 池上一隆; 黒部篤
2017
2017, vol.117, no.9
[招待講演]ナノドット型恒久メモリーの研究
渡邊強; 三浦典之; 劉施佳; 今井繁規; 永田真
2017
2017, vol.117, no.9
[依頼講演]IoTローカルデバイス向けCMOSプロセスとNAND型フラッシュプロセスで構成される1.0V動作NAND型フラッシュメモリ書き込み電圧生成回路
鶴見洸太; 田中誠大; 竹内健
2017
2017, vol.117, no.9
[依頼講演]リード·ホット·データとコールド·データのエラーを削減するデータセンタ向けTLC NAND型フラッシュメモリの高信頼制御技術
中村俊貴; 小林惇朗; 竹内健
2017
2017, vol.117, no.9
[依頼講演]16/14nmノード以降における高速かつ高信頼性を有する混載クラッシュメモリ向けFinFET Split-Gate MONOS
津田是文; 川嶋祥之; 園田賢一郎; 吉冨敦司; 三原竜善; 鳴海俊一; 井上真雄; 村中誠志; 丸山隆弘; 山下朋弘; 山口泰男; 久本大
2017
2017, vol.117, no.9
[招待講演]車載用アプリケーションが求める混載Flash技術
中野全也; 伊藤孝; 山内忠昭; 山口泰男; 河野隆司; 日高秀人
2017
2017, vol.117, no.9
[依頼講演]不揮発性SRAMのアーキテクチャとエネルギー性能
北形大樹; 周藤悠介; 山本修一郎; 菅原聡
2017
2017, vol.117, no.9
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